DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D049
BAP51-03
General purpose PIN diode
Product specification
Supersedes data of 1999 May 10
1999 Aug 16
Philips Semiconductors
Product specification
General purpose PIN diode
FEATURES
•
Low diode capacitance
•
Low diode forward resistance.
APPLICATIONS
•
General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD323 small plastic
SMD package.
handbook, halfpage
BAP51-03
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
1
2
MAM406
Marking code:
A5.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
S
= 90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
50
50
500
+150
+150
V
mA
mW
°C
°C
UNIT
1999 Aug 16
2
Philips Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
R
I
R
C
d
PARAMETER
forward voltage
reverse voltage
reverse current
diode capacitance
CONDITIONS
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
τ
L
charge carrier life time
when switched from I
F
= 10 mA
to I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
MIN.
−
50
−
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.2
5.5
3.6
1.5
550
BAP51-03
MAX.
1.1
−
100
−
0.55
0.35
9
6.5
2.5
−
UNIT
V
V
nA
pF
pF
pF
Ω
Ω
Ω
ns
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
120
UNIT
K/W
1999 Aug 16
3
Philips Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP51-03
MGS322
handbook, halfpage
10
MGS323
handbook, halfpage
500
rD
(Ω)
5
Cd
(fF)
400
300
200
2
100
1
10
−1
1
I F (mA)
10
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
°C.
20
f = 100 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
MGS659
MGS660
handbook, halfpage
|S |
2
0
21
(dB)
−0.5
handbook, halfpage
|S |
2
0
21
(dB)
−5
(1)
(2)
(3)
−1
−10
−1.5
−15
−2
−20
−2.5
0.5
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.; (2) I
F
= 1 mA.; (3) I
F
= 0.5 mA.
Diode inserted in series with a 50
Ω
stripline circuit and biased via the
analyzer Tee network.
T
amb
= 25
°C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Fig.4
Insertion loss (|S
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|S
21
|
2
) of the diode as a function of
frequency; typical values.
1999 Aug 16
4
Philips Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BAP51-03
SOD323
A
A1
E
bp
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max.
+
0.05
−
0.05
bp
0.40
0.25
c
D
0.25
0.10
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD323
,
Lp
HE
D
1
2
(1)
Q
c
v
M
A
A
0
1
2 mm
scale
E
HE
Lp
Q
v
0.2
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-09-14
1999 Aug 16
5
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