2SD1857 datasheet, PDF - EEWORLD Datasheet

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2SD1857: DescriptionLow collector output capacitance; File Size124KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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Low collector output capacitance

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INCHANGE Semiconductor

Product Specification

isc

Silicon NPN Power Transistor

2SD1857

DESCRIPTION

·High

breakdown voltage. (BV

CEO

= 120V)

·Low

collector output capacitance.

·High

transition frequency. (fT = 50MHz)

·Complement

to Type 2SB1236

APPLICATIONS

·Designed

for audio amplifier,

voltage regulator, and general purpose power amplifiers.

ABSOLUTE MAXIMUM RATINGS(T

=25

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

VALUE

120

1.5

150

-55~150

UNIT

℃

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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