SSM6K210FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K210FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
•
•
4.0-V drive
Low ON-resistance: R
on
= 371 mΩ (max) (@V
GS
= 4.0 V),
R
on
= 228 mΩ (max) (@V
GS
= 10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note1)
T
ch
T
stg
Rating
30
±20
1.4
2.8
500
150
−55
to 150
Unit
V
V
A
mW
°C
°C
1.2.5.6
3.
4.
: Drain
: Gate
: Source
ES6
JEDEC
―
Note:
JEITA
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2N1A
temperature, etc.) may cause this product to decrease in the
Weight: 3 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm )
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
NP
1
2
3
1
2
3
Start of commercial production
2008-04
1
2014-03-01
SSM6K210FE
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DD
=
15 V, I
D
=
0.6 A,
V
GS
=
0 to 4.0 V, R
G
=
10
Ω
I
D
=
-1.4 A, V
GS
=
0 V
(Note 2)
V
DS
= 15 V, I
D
= 1.5 A, V
GS
= 10 V
V
DS
=
15 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
I
D
=
1 mA, V
GS
=
0 V
V
DS
=
30 V, V
GS
=
0 V
V
GS
=
±16
V, V
DS
=
0 V
(Note 2)
(Note 2)
(Note 2)
V
DS
=
5 V, I
D
=
1 mA
V
DS
=
5 V, I
D
=
0.6 A
I
D
=
0.6 A, V
GS
=
10 V
I
D
=
0.6 A, V
GS
=
4.0 V
Min
30
⎯
⎯
1.1
0.73
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
1.45
171
271
57
33
12
2.8
1.6
1.2
12.0
6.9
-0.85
Max
⎯
1
±1
2.6
⎯
228
371
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
ns
V
nC
pF
Unit
V
μA
μA
V
S
mΩ
Drain-source forward voltage
Note 2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
4.0 V
0
10
μs
OUT
V
DD
=
15 V
R
G
=
10
Ω
Duty
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
(b) V
IN
4.0 V
10%
90%
IN
R
G
0V
V
DD
(c) V
OUT
V
DS (ON)
t
on
t
r
90%
10%
t
f
t
off
V
DD
Notice on Usage
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to below (1 mA for the
SSM6K210FE). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2014-03-01
SSM6K210FE
I
D
– V
DS
3
10 V
5.0 V
4.0V
10
Common Source
VDS
=
5 V
I
D
– V
GS
(A)
I
D
I
D
3.0 V
2
(A)
Drain current
3.5 V
1
Drain current
0.1
Ta
=
100 °C
0.01
−
25 °C
0.001
25 °C
1
VGS = 2.5 V
Common Source
Ta
=
25 °C
0
0.5
1.0
1.5
2
0
0.0001
0
1
2
3
4
Drain-source voltage
V
DS
(V)
Gate-source voltage
V
GS
(V)
R
DS (ON)
– V
GS
800
ID
= 0.6
A
Common Source
800
R
DS (ON)
– I
D
Common Source
Ta
=
25°C
Drain-source ON-resistance
R
DS (ON)
(mΩ)
Drain-source ON-resistance
R
DS (ON)
(mΩ)
600
600
400
400
4.0V
200
VGS = 10 V
200
Ta
=
100 °C
25 °C
−
25 °C
0
0
10
20
0
0
1
2
3
Gate-source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
800
3.0
V
th
– Ta
Common Source
V
th
(V)
Common Source
VDS
=
5V
ID
=
1 mA
2.0
Drain-source ON-resistance
R
DS (ON)
(mΩ)
600
400
0.6 A / 4.0V
Gate threshold voltage
1.0
200
ID
= 0.6
A / VGS
=
10 V
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2014-03-01
SSM6K210FE
|Y
fs
| – I
D
(S)
10
Common Source
I
DR
– V
DS
10
Common Source
VGS
=
0 V
D
1
G
I
DR
⎪Y
fs
⎪
3
Ta
=
25°C
Forward transfer admittance
1
Drain reverse current
I
DR
(A)
VDS
=
5 V
S
0.1
Ta =100 °C
25 °C
0.01
0.3
0.1
0.03
−25
°C
0.01
0.01
0.001
0.1
1
10
0
-0.5
-1.0
-1.5
Drain current
I
D
(A)
Drain-source voltage
V
DS
(V)
1000
C – V
DS
1000
t – I
D
Common Source
VDD
=
15 V
VGS
=
0 to 4.0 V
Ta
=
25 °C
RG
=
10
Ω
(ns)
300
(pF)
toff
100
tf
100
Ciss
30
Coss
C
Capacitance
Switching time
t
10
Common Source
Ta
=
25°C
f
=
1 MHz
VGS
=
0 V
1
10
Crss
10
ton
3
tr
1
0.1
100
1
0.01
0.1
1
10
Drain-source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
10
P
D
– Ta
1.2
(V)
ID
=
1.5 A
8
Ta
=
25 °C
(W)
Common Source
Mounted on FR4 board
1
t
=
10 s
0.8
(25.4 mm
×
25.4 mm
×
1.6 mm,
Cu Pad: 645 mm )
2
V
GS
Gate-Source voltage
6
V
DS
= 15V
4
24V
Drain power dissipation
P
D
0.6
DC
0.4
2
0.2
0
0
1
2
3
0
0
50
100
150
Total Gate Charge
Qg
(nC)
Ambient temperature
Ta
(°C)
4
2014-03-01
SSM6K210FE
r
th
– t
w
r
th
(°C /W)
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm )
Transient thermal impedance
100
10
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
5
2014-03-01
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