In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
s
Electro-optical Characteristics
Input
Parameter
Forward voltage
Reverse current
Repetitive peak OFF-state current
S11MD7T/S21MD7T
S11MD9T/S21MD9T
ON-state voltage
S11MD8T/S21MD8T
Holding current
Critical rate of rise of OFF-state voltage
Zere-cross voltage
S11MD8T/S21MD8T
S11MD7T/S21MD7T
Minimum trigger
S11MD8T/S21MD8T
current
S11MD9T/S21MD9T
Isolation resistance
S11MD7T
S11MD9T/S21MD7T/
Turn-on time
S21MD9T
S11MD8T/S21MD8T
Symbol
Conditions
I
F
= 20mA
V
F
V
R
= 3V
I
R
I
DRM
V
DRM
= Rated
V
T
I
H
dV/dt
V
OX
I
FT
R
ISO
I
T
= 0.1A
V
D
= 6V
V
DRM
= 1/
2
• Rated
Resistance load, I
F
= 10mA
V
D
= 6V, R
L
= 100Ω
DC500V, 40 to 60% RH
V
D
= 6V, R
L
= 100Ω
I
F
= 20mA
MIN.
-
-
-
-
-
0.1
100
-
-
-
5 x 10
10
-
-
-
TYP.
1.2
-
-
1.5
1.7
0.5
-
-
-
-
10
11
70
60
20
( Ta = 25˚C)
MAX.
1.4
10
- 5
10
- 6
2.5
2.5
3.5
-
35
5
7
-
100
100
50
Unit
V
A
A
V
mA
V/
µs
V
mA
Ω
µs
Output
Transfer
charac-
teristics
t
on
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
Forward current I
F
( mA )
50
40
30
20
10
0.10
RMS ON-state current I
T
(Arms)
0.05
0
- 30
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
0
- 30
0
25
50
75
100
Ambient temperature T
a
( ˚C )
125
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
12
500
Minimum trigger current I
FT
( mA )
10
200
Forward current I
F
( mA )
100
50
20
10
5
2
1
0
0.5
2.0
Forward voltage V
F
( V )
1.0
1.5
2.5
3.0
T
a
= 100˚C
75˚C
50˚C
25˚C
0˚C
- 30˚C
V
D
= 6V
R
L
= 100Ω
8
6
S11MD9T/S21MD9T
4
S11MD8T/S21MD8T
2
0
S11MD7T/S21MD7T
-30
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
Fig. 5 Relative Repetitive Peak OFF-State
Voltage vs. Ambient Temperature
1.3
Relative repetitive peak OFF-state voltage
V
DRM
( T
j
= T
a
) /V
DRM
( T
j
= 25˚C)
Fig. 6 ON-state Voltage vs. Ambient
Temperature
1.9
I
T
= 100mA
S11MD8T
1.2
ON-state voltage V
T
( V )
S11MD7T/S21MD7T
S11MD9T/S21MD9T
1.8
1.1
1.7
S21MD8T
1.0
S11MD8T/S21MD8T
1.6
0.9
1.5
S11MD7T/S21MD7T
S11MD9T/S21MD9T
1.4
1.3
-30
0.8
0.7
- 30
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
Fig. 7 Holding Current vs.
Ambient Temperature
10
V
D
= 6V
5
Holding current I
H
( mA )
Fig. 8-a Repetitive Peak OFF-state Current
vs. OFF-state Voltage
(S11MD7T/S11MD9T )
2
Repetitive peak OFF-state current I
DRM
( A )
T
a
= 25˚C
10
-9
2
S11MD8T/S21MD8T
1
0.5
5
2
0.2
0.1
- 30
S11MD7T/S21MD7T
S11MD9T/S21MD9T
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
-10
10
5
100
200
300
400
500
600
OFF-state voltage V
D
( V )
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
Fig. 8-b Repetitive Peak OFF-state Current
vs. OFF-state Voltage
(S11MD8T/S21MD8T)
2
Fig. 8-c Repetitive Peak OFF-state Current
vs. OFF-state Voltage
(S21MD7T/S21MD9T )
Repetitive peak OFF-state current I
DRM
( A )
10
- 9
5
Repetitive peak OFF-state current I
DRM
( A )
T
a
= 25˚C
10
- 7
S21MD8T
T
a
=25˚C
5
2
S11MD8T
2
10
- 10
5
10
- 8
2
5
100
200
300
400
500
OFF-stage voltage V
D
( V )
600
10
- 11
100
200
300
400
500
Off-state voltage V
D
( V )
600
Fig. 9-a Repetitive Peak OFF-state Current
vs. Ambient Temperature
(S11MD7T/S11MD9T/S21MD7T/S21MD9T)
-7
10
Repetitive peak OFF-state current I
DRM
( A )
V
D
= 400V (
S11MD7T/S11MD9T
)
V
D
= 600V (
S21MD7T/S21MD9T
)
10
- 8
Fig. 9-b Repetitive Peak OFF-state Current
vs. Ambient Temperature
(S11MD8T/S21MD8T )
-4
10
Repetitive peak OFF-state current I
DRM
(A)
V
D
= 400V
(
S11MD8T
)
V
D
= 600V
(
S21MD8T
)
10
- 5
S21MD8T
10
- 6
S11MD8T
10
- 7
10
- 9
10
- 10
10
- 11
10
- 8
10
- 12
- 30
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
10
- 9
- 30
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
Fig.10 Zero-cross Voltage vs.
Ambient Temperature
(S11MD8T/S21MD8T )
R load
I
F
= 10mA
Zero-cross voltage V
OX
( V )
25
Fig.11-a Turn-on Time vs. Forward Current
( S11MD7T )
200
V
D
= 6V
R
L
= 100Ω
Turn-on time t
on
(
µs
)
0
20
40
60
80
Ambient temperature T
a
( ˚C )
100
100
20
50
30
20
5
10
20
Forward current I
F
( mA )
50
15
-30
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
Fig.11-b Turn-on Time vs. Forward Current
(S11MD8T/S21MD8T )
100
V
D
= 6V
R
L
= 100Ω
Fig.11-c Turn-on Time vs. Forward Current
(S11MD9T/S21MD7T/S21MD9T )
200
V
D
= 6V
R
L
= 100Ω
Turn-on time t
on
(
µs
)
50
Turn-on time t
on
(
µs
)
5
10
20
Forward current I
F
( mA)
50
100
50
20
30
10
20
5
10
20
Forward current I
F
( mA )
50
Fig.12-a ON-state Current vs.
ON-state Voltage
(S11MD7T/S21MD7T/S11MD9T/S21MD9T )
100
90
80
ON-state current I
T
( mA )
I
F
= 20mA
T
a
= 25˚C
Fig.12-b ON-state Current vs.
ON-state Voltage
(S11MD8T/S21MD8T )
100
90
80
ON-state current I
T
( mA )
70
60
S21MD8T
50
S11MD8T
40
30
20
10
0
I
F
= 20mA
T
a
= 25˚C
70
60
50
40
30
20
10
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ON-state voltage V
T
( V )
S11MD7T
S21MD7T
S11MD9T
S21MD9T
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ON-state voltage V
T
( V )
s
Basic Operation Circuit
S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
1
6
+
V
CC
Load
AC100V
(S11MD7T/S11MD8T/S11MD9T )
AC200V
(S21MD7T/S21MD8T/S21MD9T )
2
V
IN
Zero-
cross
circuit
4
Zero-cross Circuit
( S11MD8T/S21MD8T )
q
Please refer to the chapter “ Precautions for Use.”
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