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MT16LSDT1664AG-133B1

Description
Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, MO-161, DIMM-168
Categorystorage    storage   
File Size710KB,26 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric Compare View All

MT16LSDT1664AG-133B1 Overview

Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, MO-161, DIMM-168

MT16LSDT1664AG-133B1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeDIMM
package instructionDIMM,
Contacts168
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
JESD-609 codee0
memory density1073741824 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature65 °C
Minimum operating temperature
organize16MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
64MB (x64, SR), 128MB (x64, DR)
168-PIN SDRAM UDIMM
SYNCHRONOUS
DRAM MODULE
Features
168-pin, dual in-line memory module (DIMM)
PC100- and PC133- compliant
Utilizes 125 MHz and 133 MHz SDRAM components
Unbuffered
64MB (8 Meg x 64), 128MB (16 Meg x 64)
Single +3.3V power supply
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal SDRAM banks for hiding row access/
precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto Precharge, includes CONCURRENT AUTO
PRECHARGE and Auto Refresh Modes
Self Refresh Mode: 64ms, 4,096-cycle refresh
(15.625µs refresh interval)
LVTTL-compatible inputs and outputs
Serial Presence-Detect (SPD)
Gold edge contacts
MT8LSDT864A – 64MB
MT16LSDT1664A – 128MB
For the latest data sheet, please refer to the Micron
Web
site:
www.micron.com/products/modules
Figure 1: 168-Pin DIMM (MO-161)
Standard 1.375in. (34.93mm)
Low Profile 1.125in. (28.58mm)
Options
• Package
168-pin DIMM (standard)
168-pin DIMM (lead-free)
• Memory Clock/CAS Latency
7.5ns (133 MHz)/CL = 2
7.5ns (133 MHz)/CL = 3
10ns (100 MHz)/CL = 2
• PCB
Standard 1.375in. (34.93mm)
Low Profile 1.125in. (28.58mm)
NOTE:
Marking
G
Y
1
-13E
-133
-10E
See page 2 note
See page 2 note
Table 1:
Timing Parameters
SETUP
TIME
1.5
1.5
2ns
HOLD
TIME
0.8
0.8
1ns
CL = CAS (READ) latency
ACCESS TIME
MODULE
CLOCK
MARKING FREQUENCY CL = 2 CL = 3
-13E
-133
-10E
133 MHz
133 MHz
100 MHz
5.4ns
9ns
5.4ns
7.5ns
1. Contact Micron for product availability.
Table 2:
Address Table
64MB
128MB
4K
4 (BA0, BA1)
64Mb (8 Meg x 8)
4K (A0–A11)
512 (A0–A8)
2 (S0, S2; S1, S3)
4K
4 (BA0, BA1)
64Mb (8 Meg x 8)
4K (A0–A11)
512 (A0–A8)
1 (S0, S2)
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Ranks
pdf: 09005aef812230b2, source: 09005aef81037690
SD8_16C8_16x64AG.fm - Rev. C 7/04 EN
1
©2004 Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

MT16LSDT1664AG-133B1 Related Products

MT16LSDT1664AG-133B1 MT16LSDT1664AY-133B1
Description Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, MO-161, DIMM-168 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, MO-161, DIMM-168
Is it Rohs certified? incompatible conform to
Maker Micron Technology Micron Technology
Parts packaging code DIMM DIMM
package instruction DIMM, DIMM,
Contacts 168 168
Reach Compliance Code unknow compli
ECCN code EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 5.4 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N168 R-XDMA-N168
JESD-609 code e0 e4
memory density 1073741824 bi 1073741824 bi
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64
Number of functions 1 1
Number of ports 1 1
Number of terminals 168 168
word count 16777216 words 16777216 words
character code 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 65 °C 65 °C
organize 16MX64 16MX64
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Certification status Not Qualified Not Qualified
self refresh YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Gold (Au)
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 30
Base Number Matches 1 1

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