Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY459X-1500, BY459X-1500S
SYMBOL
QUICK REFERENCE DATA
V
R
= 1500 V
V
F
≤
1.2 V / 1.25 V
I
F(peak)
= 12 A (f = 48 kHz)
I
F(peak)
= 10 A (f = 82 kHz)
I
FSM
≤
100 A
t
rr
≤
350 ns / 220 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring fast forward
recovery and low forward recovery
voltage. The device is intended for
use in HDTV receivers and
multi-sync
monitor
horizontal
deflection circuits.
The BY459X series is supplied in
the conventional leaded SOD113
package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD113
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
V
RSM
V
RRM
V
RWM
I
F(peak)
I
FRM
I
F(RMS)
I
FSM
Peak non repetitive reverse
voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
Peak working forward current
Peak repetitive forward
current
RMS forward current
Peak non-repetitive forward
current
Storage temperature
Operating junction
temperature
f = 48 kHz;
f = 82 kHz;
t = 100
µs
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior to
surge; with reapplied V
RWM(max)
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1500
1500
1300
-1500
12
-
-1500S
-
10
100
30
100
110
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
T
stg
T
j
August 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from
both terminals to external
heatsink
CONDITIONS
BY459X-1500, BY459X-1500S
MIN.
-
TYP.
MAX.
2500
UNIT
V
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V
F
I
R
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 ˚C
V
R
= 1300 V
V
R
= 1300 V; T
j
= 125 ˚C
TYP.
0.95
0.85
-
-
1.05
0.95
250
1
MAX.
1.30
1.20
-
-
1.35
1.25
250
1
UNIT
V
V
µA
mA
BY459X- 1500 1500S 1500 1500S
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t
rr
Q
s
V
fr
t
fr
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
Forward recovery time
CONDITIONS
I
F
= 1 A, V
R
≥
30 V;
I
F
= 2 A, -dI
F
/dt = 20 A/µs
I
F
= 6.5A, dI
F
/dt = 50A/µs
I
F
= 6.5A, dI
F
/dt = 50A/µs
TYP.
BY459X- 1500 1500S
0.25
2.0
8.0
170
0.17
0.70
11.0
200
MAX.
1500
0.35
3.0
14.0
250
1500S
0.22
0.95
19.0
300
µs
µC
V
ns
UNIT
August 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY459X-1500, BY459X-1500S
I
F
100
Maximum pulse width / us
V
BY459X-1500
VRRM
10%
tfr
VF
V
VF
5V / 2V
time
fr
1
10
pulse
width tp
time
period T
time
10
100
line frequency / kHz
Fig.1. Definition of Vfr and tfr
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
I
dI
F
dt
F
30
IF / A
Tj = 125 C
Tj = 25 C
BY459
trr
time
20
typ
10
max
Qs
25%
100%
I
R
0
0
0.5
1
VF / V
1.5
2
Fig.2. Definition of t
rr
and Q
s
Fig.5. BY459X-1500 Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
BY459S
VCC
30
IF / A
Tj = 125 C
Tj = 25 C
Line output transformer
LY
20
typ
10
max
Cf
deflection transistor
D1
Cs
0
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.6. BY459X-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
August 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY459X-1500, BY459X-1500S
10
Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY459F
10s
Fig.7. Transient thermal impedance Z
th
= f(t
p
)
August 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.2
3.0
10.3
max
BY459X-1500, BY459X-1500S
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
1.0 (2x)
0.6
2.54
5.08
0.5
2.5
0.9
0.7
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1998
5
Rev 1.000
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