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BUK7Y12-100EX

Description
MOSfet N-channel 100 V 12 mo fet
Categorysemiconductor    Discrete semiconductor   
File Size293KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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BUK7Y12-100EX Overview

MOSfet N-channel 100 V 12 mo fet

BUK7Y12-100EX Parametric

Parameter NameAttribute value
ManufactureNXP
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre85 A
Rds On - Drain-Source Resistance8.1 mOhms
ConfiguratiTriple Common Source
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge68 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipati238 W
Mounting StyleSMD/SMT
Package / CaseLFPAK56-4
PackagingReel
Fall Time66 ns
Minimum Operating Temperature- 55 C
Rise Time18 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time66 ns
LF
BUK7Y12-100E
8 May 2013
PA
K
56
N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
21
-
nC
Min
-
-
-
Typ
-
-
-
Max
100
85
238
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
8.1
12
Dynamic characteristics
Q
GD
gate-drain charge
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