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BYV32F-200

Description
6 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size42KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BYV32F-200 Overview

6 A, 200 V, SILICON, RECTIFIER DIODE

BYV32F-200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-609 codee0
Maximum non-repetitive peak forward current160 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
BYV32F, BYV32EX series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
0.85 V
I
O(AV)
= 12 A
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32F series is supplied in the SOT186 package.
The BYV32EX series is supplied in the SOT186A package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
square wave
δ
= 0.5; T
hs
95 ˚C
t = 25
µs; δ
= 0.5;
T
hs
95 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV32F / BYV32EX
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
12
20
125
137
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.300

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