BYV32F-150 datasheet, PDF - EEWORLD Datasheet

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BYV32F-150: Description6 A, 150 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size42KB，7 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BYV32F-150 Overview

6 A, 150 V, SILICON, RECTIFIER DIODE

BYV32F-150 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknow
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	160 A
Maximum operating temperature	150 °C
Maximum output current	10 A
Maximum repetitive peak reverse voltage	150 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

FEATURES

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Isolated mounting tab

BYV32F, BYV32EX series

SYMBOL

QUICK REFERENCE DATA

= 150 V/ 200 V

k 2

≤

0.85 V

O(AV)

= 12 A

RRM

= 0.2 A

≤

25 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV32F series is supplied in the SOT186 package.

The BYV32EX series is supplied in the SOT186A package.

PINNING

tab

DESCRIPTION

anode 1 (a)

cathode (k)

anode 2 (a)

isolated

SOT186

case

SOT186A

case

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

RRM

RWM

O(AV)

FRM

FSM

PARAMETER

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

square wave

= 0.5; T

≤

95 ˚C

t = 25

µs; δ

= 0.5;

≤

95 ˚C

t = 10 ms

t = 8.3 ms

sinusoidal; with reapplied

RWM(max)

Repetitive peak reverse current t

= 2

µs; δ

= 0.001

per diode

Non-repetitive peak reverse

= 100

µs

current per diode

Storage temperature

Operating junction temperature

Average rectified output current

(both diodes conducting)

Repetitive peak forward current

per diode

Non-repetitive peak forward

current per diode

CONDITIONS

BYV32F / BYV32EX

-40

MIN.

-150

150

125

137

0.2

150

MAX.

-200

200

UNIT

˚C

RRM

RSM

stg

Neglecting switching and reverse current losses

October 1998

Rev 1.300

BYV32F-150 Related Products

	BYV32F-150	BYV32EX	BYV32F	BYV32F-200
Description	6 A, 150 V, SILICON, RECTIFIER DIODE	Rectifier diodes ultrafast, rugged	Rectifier diodes ultrafast, rugged	6 A, 200 V, SILICON, RECTIFIER DIODE

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