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LN100LA-G

Description
mosfet 1200v cascoded N-channel mosfet
Categorysemiconductor    Discrete semiconductor   
File Size871KB,6 Pages
ManufacturerSupertex
Environmental Compliance
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LN100LA-G Overview

mosfet 1200v cascoded N-channel mosfet

LN100LA-G Parametric

Parameter NameAttribute value
ManufactureSupertex
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Curre3 mA
Rds On - Drain-Source Resistance3 kOhms
ConfiguratiDual
Vgs th - Gate-Source Threshold Voltage1.6 V
Maximum Operating Temperature+ 125 C
Pd - Power Dissipati350 mW
Mounting StyleSMD/SMT
Package / CaseLGA-6
PackagingReel
Factory Pack Quantity3000
Supertex inc.
1200V Cascoded
N-Channel MOSFET
Features
1200V breakdown voltage
Low threshold, 1.6V max.
High input impedance
Low input capacitance
Integrated high voltage resistor divider
Integrated 1000:1 resistor divider
Compact 3x3 LFGA package
High voltage shunt regulator
High voltage linear amplifier
High voltage digital pulsers
High voltage sensing circuit
LN100
General Description
The LN100 is a 1200V cascoded N-channel MOSFET
with an integrated high value high voltage resistor divider.
Multiple devices can be used in series for voltages
greater than 1200V. A resistor divider ratio of 1000:1 is
provided. High value resistors are used to minimize power
consumption.
The maximum Gate-to-Source threshold voltage is 1.6V.
This allows the Gate to be controlled by low voltage
circuitry. The LN100 can be used as a high voltage low
power pulser. It can also be used in a high voltage low
current amplifier application where it is used to charge and
discharge a small capacitive load.
Applications
Ordering Information
Part Number
LN100LA-G
Package Option
6-Lead LFGA
Packing
3000/Reel
Product Summary
min (V)
BV
DSS
1200
max
(kΩ)
R
DS(ON)
3.0
min (mA)
I
D(ON)
3.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
6
5
DRAIN
V1
Absolute Maximum Ratings
Parameter
Drain-to-Source voltage
V
1
- V
2
differential voltage
V
2
- V
3
differential voltage
Maximum junction temperature
Power dissipation, T
A
= 25°C
Value
1200V
1200V
5.0V
+125°C
350mW
1
V2
1
V3
2
GATE SOURCE
3
4
Absolute Maximum Ratings are those values beyond which damage
to the device may occur. Functional operation under these conditions
is not implied. Continuous operation of the device at the absolute
rating level may affect device reliability. All voltages are referenced
to device ground.
Note:
1. Device mounted on a 25mm x 25mm x 1.57mm board.
(top view)
Pads are at bottom of package.
6-Lead LFGA
Product Marking
Typical Thermal Resistance
Package
6-Lead LFGA
θ
ja
186
O
C/W
L100
YWLL
Y = Last Digit of Year Sealed
W = Code for Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
6-Lead LFGA
Doc.# DSFP-LN100
NR100312
Supertex inc.
www.supertex.com
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Index Files: 2399  2738  1991  1499  2311  49  56  41  31  47 
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