BYW51-100, BYW51-150, BYW51-200
June 1995
File Number 1412.2
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (t
RR
< 35ns). They use a planar
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-width-
modulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize elec-
trical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
Features
• Ultra Fast Recovery Time (<35ns)
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
• Full-Wave Rectification
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
BYW51-100
BYW51-150
BYW51-200
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
BYW51100
BYW51150
BYW51200
Package
JEDEC TO-220AB
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A1
A2
Absolute Maximum Ratings
Per Junction
BYW51-100
BYW51-150
150
165
100
20
8
100
20
-40 + 150
260
BYW51-200
200
220
100
20
8
100
20
-40 + 150
260
UNITS
V
V
A
A
A
A
W
o
C
o
C
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . V
RRM
Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . V
RSM
Repetitive Peak Surge Current. . . . . . . . . . . . . . l
FRM
, t
P
< 10µs
Nonrepetitive Peak Surge Current . . . . . . . . . . . . l
F
(RMS), Total
Average Rectified forward Current . . . . . . . . . . . . . . l
F(AV)
, Total
T
C
= +125
o
C, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . l
FSM
t
P
= 10ms, Sinusoidal
Maximum Power Dissipation . . . . . . . . . . . . . . P
D
, T
C
= +125
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
T
L
(Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance >
1
/
8
in. (3.17mm) From Case For 10s max.
100
110
100
20
8
100
20
-40 + 150
260
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
BYW51-100, BYW51-150, BYW51-200
Typical Performance Curves
160
I
FSM
, PEAK SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
REAPPLIED V
R
(PK) = V
RM
140
R
θJC
, THERMAL IMPEDANCE (
o
C/W)
100
120
100
80
T
J
= 100
o
C
60
40
20
0
1
10
0
1
10
100
1000
t
P
, PULSE WIDTH (ms)
N, NUMBER OF HALF-CYCLES IN SURGE DURATION AT 50Hz
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
FIGURE 1. PEAK SURGE FORWARD CURRENT vs SURGE
DURATION
100
FIGURE 2. THERMAL IMPEDANCE vs PULSE WIDTH
(PER JUNCTION)
10,000
T
J
= +150
o
C
I
R
, REVERSE CURRENT (µA)
1000
T
J
= +125
o
C
T
J
= -55
o
C
T
J
= +25
o
C
I
F
, FORWARD CURRENT (A)
10
T
J
= +100
o
C
T
J
= +125
o
C
100
T
J
= +100
o
C
10
1
T
J
= +150
o
C
1
T
J
= +25
o
C
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0.01
0.1
1
10
100
1000
V
F
, FORWARD VOLTAGE DROP (V)
V
RM
, VOLTAGE IN % RATED V
RRM
(V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
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