TLP127
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP127
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA mini flat coupler TLP127 is a small outline coupler,
suitable for surface mount assembly.
TLP127 consists of a gallium arsenide infrared emitting diode, optically
coupled to a darlington photo transistor with an integral base−emitter
resistor, and provides 300V V
CEO
.
•
•
•
•
•
Collector−emitter voltage: 300 V (min.)
Current transfer ratio: 1000% (min.)
Isolation voltage: 2500Vrms (min.)
UL recognized: UL1577, file no. E67349
BSI approved: BS EN60065:2002, certificate no.8927
BS EN60950-1:2002, certificate no.8928
TOSHIBA
Weight: 0.09 g
11−4C1
Unit in mm
Pin Configurations
(top view)
1
6
3
4
1 : ANODE
3 : CATHODE
4 : EMITTER
6 : COLLECTOR
1
2007-10-01
TLP127
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating
LED
Pulse forward current
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
Collector power dissipation
derating (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta
≥
25°C)
Isolation voltage
(Note 1)
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
50
−0.7
(Ta
≥
53°C)
1 (100μs pulse, 100pps)
5
125
300
0.3
150
150
−1.5
125
−55~125
−55~100
260 (10s)
200
−2.0
2500 (AC, 1min., R.H.≤ 60%)
Unit
mA
mA / °C
A
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together.
2
2007-10-01
TLP127
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance collector to
emitter
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= 10 mA
VR = 5V
V = 0, f = 1 MHz
I
C
= 0.1 mA
I
E
= 0.1 mA
V
CE
= 200 V
V
CE
= 200 V, Ta = 85°C
V = 0, f = 1 MHz
Min.
1.0
―
―
300
0.3
―
―
―
Typ.
1.15
―
30
―
―
10
―
12
Max.
1.3
10
―
―
―
200
20
―
Unit
V
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector−emitter
saturation voltage
Symbol
I
C
/ I
F
I
C
/ I
F (sat)
V
CE (sat)
Test Condition
I
F
= 1mA, V
CE
= 1 V
I
F
= 10 mA, V
CE
= 1 V
I
C
= 10 mA, I
F
= 1 mA
I
C
= 100 mA, I
F
= 10 mA
MIn.
1000
500
―
0.3
Typ.
4000
―
―
―
Max.
―
―
1.0
1.2
Unit
%
%
V
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V, R.H.≤ 60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min.
―
5×10
10
Typ.
0.8
10
14
Max.
―
―
―
―
―
Unit
pF
Ω
V
rms
V
dc
2500
―
―
―
5000
5000
3
2007-10-01
TLP127
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 180
Ω
V
CC
= 10 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 10 mA
R
L
= 100
Ω
Test Condition
Min.
―
―
―
―
―
―
―
Typ.
40
15
50
15
5
40
80
Max.
―
―
―
―
―
―
―
μs
μs
Unit
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
IC
T
opr
Min.
―
―
―
−25
Typ.
―
16
―
―
Max.
200
25
120
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Fig. 1 Switching time test circuit
I
F
R
L
V
CC
V
CE
I
F
t
s
V
CE
V
CC
9V
1V
t
ON
t
OFF
4
2007-10-01
TLP127
I
F
– Ta
100
200
P
C
– Ta
Allowable collector power
dissipation P
C
(mW)
Allowable forward current
I
F
(mA)
80
160
60
120
40
80
20
40
0
−20
0
20
40
60
80
100
120
0
−20
0
20
40
60
80
100
120
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
I
FP
– D
R
I
FP (mA)
3000
100
Pulse width
≤
100μs
Ta = 25°C
50
Ta = 25°C
I
F
– V
F
500
(mA)
I
F
Forward current
10
−
3
3
10
−
2
3
10
−
1
3
10
0
1000
30
10
5
3
1
0.5
0.3
Pulse forward current
300
100
50
30
10
3
Duty cycle ratio
D
R
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage
V
F
(V)
ΔV
F
/
ΔTa
– I
F
Forward voltage temperature
coefficient
ΔV
F
/
ΔTa
(mV / °C)
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1
1000
I
FP
– V
FP
(mA)
I
FP
Pulse forward current
500
300
100
50
30
10
5
3
1
0.6
Pulse width
≤
10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
1.0
1.4
1.8
2.2
2.6
3.0
0.3 0.5
1
3
5
10
30
50
Forward current
I
F
(mA)
Pulse forward voltage
V
FP
(V)
5
2007-10-01
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