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BZV55-C4V7

Description
4.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size296KB,7 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
Download Datasheet Parametric View All

BZV55-C4V7 Overview

4.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZV55-C4V7 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Rated working voltage4.7 V
Processing package descriptionGLASS, MINIMELF-2
stateTRANSFERRED
packaging shapeROUND
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
Terminal locationEND
Packaging MaterialsGLASS
CraftsmanshipZENER
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Maximum power consumption limit0.4000 W
polarityUNIDIRECTIONAL
Diode typeVOLTAGE REGULATOR DIODE
Working test current5 mA
Maximum total reference voltage5 %
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
BZV55 SERIES
ZENER DIODES
Mini-MELF
FEATURES
Silicon Planar Power Zener Diodes
.063 (1.6)
.055 (1.4)
Cathode Mark
For use as low voltage stabilizer or
voltage reference.
The Zener voltages are graded according to the
international E 24 standard. Higher Zener voltages
and 1% tolerance available on request.
Diodes available in these tolerance series:
±
2% BZV55-B,
±
3% BZV55-F,
±
5% BZV55-C.
MECHANICAL DATA
Case:
Mini-MELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Cathode band color:
Blue
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current see Table “Characteristics”
Power Dissipation at T
flange
= 50°C
Power Dissipation at T
A
= 50°C
Junction Temperature
Storage Temperature Range
Continuous Forward Current
Peak reverse power disipation (non-repetitive) tp=100µs
P
tot
P
tot
T
j
T
S
I
F
P
ZSM
500
400
(1)
mW
mW
°C
°C
mA
W
–65 to +200
–65 to +200
250
30
(2)
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Lead
Forward Voltage at I
F
= 10 mA
R
thJA
R
thJL
V
F
0.38
0.9
(1)
K/mW
K/mW
V
0.30
NOTES:
1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm
2) Tj = 150°C
9/29/98

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