BZV55-C4V3 datasheet, PDF - EEWORLD Datasheet

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BZV55-C4V3: Description4.3 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE; Categorysemiconductor Discrete semiconductor; File Size296KB，7 Pages; ManufacturerGE Sensing ( Amphenol Advanced Sensors ); Websitehttp://www.vishay.com/

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BZV55-C4V3 Overview

4.3 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZV55-C4V3 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Rated working voltage	4.3 V
Processing package description	Glass, MINIMELF-2
state	DISCONTINUED
packaging shape	round
Package Size	LONG FORM
surface mount	Yes
Terminal form	WRAP AROUND
Terminal location	END
Packaging Materials	Glass
Craftsmanship	ZENER
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	0.4000 W
polarity	unidirectional
Diode type	Zener diode
Working test current	5 mA
Maximum total reference voltage	5 %

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NEW PRODUCT

BZV55 SERIES

ZENER DIODES

Mini-MELF

FEATURES

♦

Silicon Planar Power Zener Diodes

∅

.063 (1.6)

.055 (1.4)

Cathode Mark

♦

For use as low voltage stabilizer or

voltage reference.

♦

The Zener voltages are graded according to the

international E 24 standard. Higher Zener voltages

and 1% tolerance available on request.

♦

Diodes available in these tolerance series:

2% BZV55-B,

3% BZV55-F,

5% BZV55-C.

MECHANICAL DATA

Case:

Mini-MELF Glass Case (SOD-80)

Weight:

approx. 0.05 g

Cathode band color:

Blue

.142 (3.6)

.134 (3.4)

.019 (0.48)

.011 (0.28)

Dimensions are in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNIT

Zener Current see Table “Characteristics”

Power Dissipation at T

flange

= 50°C

Power Dissipation at T

= 50°C

Junction Temperature

Storage Temperature Range

Continuous Forward Current

Peak reverse power disipation (non-repetitive) tp=100µs

tot

ZSM

500

400

(1)

°C

–65 to +200

250

(2)

SYMBOL

MIN.

TYP.

MAX.

UNIT

Thermal Resistance Junction to Ambient Air

Thermal Resistance Junction to Lead

Forward Voltage at I

= 10 mA

thJA

thJL

0.38

0.9

(1)

K/mW

0.30

NOTES:

1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm

2) Tj = 150°C

9/29/98

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