BSP170E6327 datasheet, PDF - EEWORLD Datasheet

BSP170E6327: DescriptionPower Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size834KB，6 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSP170E6327 Overview

Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	8 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	1.7 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	6.8 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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