Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
| Parameter Name | Attribute value |
| Maker | Renesas Electronics Corporation |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | HIGH RELIABILITY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 4 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Maximum output current | 0.2 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.5 W |
| Certification status | Not Qualified |
| Maximum reverse current | 0.1 µA |
| Maximum reverse recovery time | 0.003 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
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