Bulletin I27106 rev. B 02/02
T..HF SERIES
POWER RECTIFIER DIODES
Features
Electrically isolated base plate
Types up to 1200 V
RRM
3500 V
RMS
isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
T-Modules
40 A
70 A
85 A
110 A
Description
These series of T-modules use standard recovery
power rectifier diodes. The semiconductors are
electrically isolated from the metal base, allowing
common heatsink and compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
Major Ratings and Characteristics
Parameters
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
50Hz
60Hz
50Hz
60Hz
I
2
√t
V
RRM
range
T
J
T40HF T70HF T85HF T110HF Units
40
63
570
600
1630
1500
16300
70
110
1200
1250
7100
6450
85
134
1700
1800
14500
13500
110
173
2000
2100
20500
18600
A
o
C
A
A
A
2
s
A
2
s
A
2
√s
V
o
70700 148700 204300
100 to 1200
-40 to 150
C
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1
T..HF Series
Bulletin I27106 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
10
T40HF..
T70HF..
T85HF..
T110HF..
20
40
60
80
100
120
V
RRM
, maximum repetitive
peak reverse voltage
V
100
200
400
600
800
1000
1200
V
RSM
, maximum non-repetitive
peak reverse voltage
V
150
300
500
700
900
1100
1300
I
RRM
max.
T
J
= @ 25°C
µA
100
Forward Conduction
Parameters
I
F(AV)
Max. average fwd current
@ Case temperature
I
F(RMS)
Max. RMS forward current
I
FSM
Max. peak, one-cycle
forward,non-repetitive
surge current
It
2
T40HF T70HF T85HF T110HF Units
Conditions
40
85
63
570
600
480
500
1630
1500
1150
1050
70
85
110
1200
1250
1000
1050
7100
6450
5000
4570
85
85
134
1700
1800
1450
1500
14500
13500
10500
9600
110
85
173
2000
2100
1700
1780
20500
18600
14500
13200
2
2
A
o
180
o
conduction, half sine wave
C
A
A
t = 10ms
t = 10ms
A s t = 10ms
t = 10ms
No voltage
100% V
RRM
Sinusoidal half wave,
Initial T
J
= T
J
max.
No voltage
100% V
RRM
t = 8.3ms reapplied
t = 8.3ms reapplied
t = 8.3ms reapplied
t = 8.3ms reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
mΩ (16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
V
I
FM
=
π
x I
F(AV)
, T
J
= 25
o
C, tp = 400
µs
square pulse
Av. power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
Maximum I t for fusing
2
I
√t
2
Maximum I
√t
for fusing
2
16300 70700 148700 204300 A
√s
t = 0.1 to 10ms, no voltage reapplied
0.66
0.84
4.3
3.1
1.30
0.76
0.95
2.4
1.7
1.35
0.68
0.90
1.76
1.08
1.27
0.68
0.86
1.56
1.12
1.35
V
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
r
f2
V
FM
Low level value of forward
slope resistance
High level value of forward
slope resistance
Max. forward voltage drop
Blocking
Parameters
I
RRM
V
INS
Max. peak reverse leakage
current
RMS isolation voltage
3500
3500
3500
3500
V
50Hz, circuit to base, all terminals shorted
T
J
= 25
o
C , t = 1s
T40HF T70HF T85HF T110HF Units
Conditions
15
15
20
20
mA T
J
= 150
o
C
2
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T..HF Series
Bulletin I27106 rev. B 02/02
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
T40HF
T70HF
T85HF
T110HF
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.15
0.11
0.10
0.08
90
o
0.20
0.15
0.13
0.10
60
o
0.28
0.21
0.19
0.15
30
o
0.46
0.35
0.31
0.24
Units
K/W
0.12
0.09
0.08
0.05
0.14
0.11
0.09
0.07
0.18
0.14
0.12
0.09
0.27
0.20
0.18
0.14
0.46
0.35
0.31
0.23
0.09
0.07
0.06
0.05
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
R
thJC
R
thCS
T
wt
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
to heatsink
1.3 ± 10%
3 ± 10%
54
D-56
Nm
g
M3.5 mounting screws
(2)
M5 screw terminals
See outline table
T type
torque ± 10%
terminals
Approximate weight
Case style
non lubricated
threads
0.2
K/W
Mounting surface smooth, flat and greased
1.36
0.69
0.62
0.47
K/W
DC operation, per junction
-40 to 150
°C
T40HF T70HF T85HF T110HF
-40 to 150
Units
°C
Conditions
(2)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread
of the compound
Ordering Information Table
Circuit configuration **
T
1
110
2
HF
120
4
Device Code
3
1
2
3
4
-
-
-
-
Module type
Current rating
Circuit configuration **
Voltage code : code x 10 = V
RRM
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T..HF Series
Bulletin I27106 rev. B 02/02
Outline Table
All dimensions in millimeters (inches)
M axim um Allow a ble C ase Tem p era ture ( C )
140
130
120
110
100
90
80
70
60
0
10
T40HF.. Series
R
thJC
(DC ) = 1.36 K/W
M axim um Allow ab le C ase Te m pe ra tu re ( C )
150
150
140
130
120
110
100
90
80
70
60
0
10
20
30
40
50
60
70
A v erag e Fo rw a rd C urrent (A )
30
60
90
120
1 80
DC
C o nd uc tio n P e rio d
T40H F.. Serie s
R
th JC
(D C ) = 1 .36 K /W
C ond uc tio n A ngle
30
60
90
120
180
20
30
40
50
A verage Fo rw ard C urrent (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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T..HF Series
Bulletin I27106 rev. B 02/02
M a xim um A ver age F orw a rd Pow er Loss (W )
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
A verag e Fo rw a rd C urrent (A )
M a xim um A llo w ab le A m bien t Tem p era ture ( C )
180
120
90
60
30
RM S Lim it
5K
/W
1.
5
K/
W
K/
R
th
1
2
3
K/
W
SA
W
K/
.5
=0
K/
W
W
-D
e lt
a
R
7K
/W
C o nd uc tio n A ng le
1 0
K /W
T40HF.. Series
T
J
= 150 C
Fig. 3 - Forward Power Loss Characteristics
M axim u m Av erage Fo rw ard P ow er Loss (W )
70
60
50
40
30 RM S Lim it
20
10
0
0
10
20
30
40
50
60
0
70
25
50
75
100
125
150
A verage Fo rw a rd C urrent (A)
M axim um A llow a ble A m bien t Tem p e ra ture ( C )
C o nd uc tio n P e rio d
DC
180
120
90
60
30
R
th
SA
1
1.
5
K/
K/
=
0.
5
K/
W
-D
W
W
/W
3K
/W
5 K/
W
2K
el
ta
R
7 K/
W
T40 HF.. Series
T
J
= 1 50 C
10 K/W
Fig. 4 - Forward Power Loss Characteristics
550
500
450
400
350
300
250
200
150
1
10
100
Num ber O f Equal Amplitude Half Cycle Current Pulses (N)
Peak H a lf Sin e W ave Fo rw ar d C ur ren t (A )
Pea k H alf Sine W a ve Fo rw a rd C urr ent (A )
A t A ny Ra te d Loa d C o nd ition A nd W ith
Ra ted V
RR M
A p p lied Fo llow in g Surg e .
Initial T
J
= 150 C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
600
550
500
450
400
350
300
250
200
150
100
0.01
M axim um N on Re petitive Surg e Current
Versus Pulse Train Duration.
Initial T
J
= 150 C
N o Voltage Reapp lied
Rated V
RR M
Reapp lied
T40HF.. Series
T40HF.. Series
0.1
Pulse Tra in D uration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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Embedded System
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