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BU4506AF

Description
5A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3
CategoryDiscrete semiconductor    The transistor   
File Size44KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BU4506AF Overview

5A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3

BU4506AF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, FULL PACK-3
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4.2
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment45 W
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max3 V
Base Number Matches1
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
3.0
300
MAX.
1500
800
5
8
45
3.0
-
450
UNIT
V
V
A
A
W
V
A
ns
T
hs
25 ˚C
I
C
= 3 A; I
B
= 0.75 A
f = 16 kHz
I
Csat
= 3.0 A;f = 16 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
32
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
July 1999
1
Rev 1.000
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