Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .T
pkg
350
4
8
±20
75
0.6
-55 to 150
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0
400
350
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA (Figure 8)
V
DS
= Rated BV
DSS
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
2
-
-
-
-
-
-
-
-
-
V
DS
= 25V,
V
GS
= 0V
f = 1MHz (Figure 9)
-
-
-
RFM4N35, RFM4N40
RFP4N35, RFP4N40
-
-
-
-
-
-
-
-
-
-
12
42
130
62
-
-
-
-
-
-
-
4
1
25
±100
2.000
8
45
60
200
100
750
150
100
1.67
2.083
V
V
V
µA
µA
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM4N40, RFP4N40
RFM4N35, RFP4N35
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On-Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
I
GSS
r
DS(ON)
V
DS(ON)
t
D(ON)
t
r
t
D(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θ
JC
V
GS
=
±20V,
V
DS
= 0
I
D
= 4A, V
GS
= 10V (Figures 6, 7)
I
D
= 4A, V
GS
= 10V
V
DD
= 200V, I
D
= 2A, R
G
= 50Ω
R
L
= 100Ω, V
GS
= 10V
(Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recorvery Time
NOTES:
2. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
SYMBOL
V
SD
t
rr
I
SD
= 2A
I
SD
= 4A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
800
MAX
1.4
-
UNITS
V
ns
2
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
5
4
RFM4N35, RFM4N40
3
RFP4N35, RFP4N40
2
0.8
0.6
0.4
0.2
0
1
0
50
100
150
0
25
50
T
C
, CASE TEMPERATURE (
o
C)
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
C
= 25
O
C
T
J
= MAX RATED
I
D
, DRAIN CURRENT (A)
RFM4N35, 40
RFP4N35, 40
7
6
5
4
3
2
1
TC = 25
o
C
80µs PULSE TEST
DUTY CYCLE
≤
2%
V
GS
= 20 V
V
GS
= 8 - 10V
V
GS
= 7V
V
GS
= 6V
I
D
, DRAIN CURRENT (A)
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
GS
= 5V
RFM4N35, RFP4N35
RFM4N40, RFP4N40
0.1
1
V
GS
= 4V
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE
1000
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
8
7
I
D
, DRAIN CURRENT (A)
6
5
4
3
2
1
0
0
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
V
DS
= 20V
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
4
T
C
= 125
o
C
3
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
2
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= -40
o
C
1
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Typical Performance Curves
2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 4A
V
GS
= 10V
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
(Continued)
1.5
V
DS
= 10V
I
D
= 250µA
1
1
0.5
0.5
0
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
0
-50
0
50
125
150
175
T
J
, JUNCTION TEMPERATURE (
0
C)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
800
700
C, CAPACITANCE (pF)
600
500
400
300
200
100
C
RSS
0
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE (V)
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
500
10
V
GS,
GATE TO SOURCE VOLTAGE (V)
375
V
DD
= BV
DSS
250
GATE
TO
V
DD
= BV
DSS
SOURCE
VOLTAGE
R
L
=100Ω
I
G(REF)
= 0.45mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
8
6
4
125
2
DRAIN SOURCE VOLTAGE
0
20
I
G(REF)
I
G(ACT)
I
G(REF)
80
I
G(ACT)
0
t, TIME (µs)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
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