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U1ZB47TE12R

Description
DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size188KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

U1ZB47TE12R Overview

DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

U1ZB47TE12R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage51.7 V
Minimum breakdown voltage42.3 V
Breakdown voltage nominal value47 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum reverse current10 µA
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
U1ZB6.8~U1ZB390
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
U1ZB6.8~U1ZB390
CONSTANT VOLTAGE REGULATION
TRANSIENT SUPPRESSORS
Average Power Dissipation : P = 1.0 W
Zener Voltage
: V
Z
= 6.8 V ~ 390 V
Surface Mounting Plastic Mold Package
Unit: mm
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
Tj
Tstg
RATING
1.0
−40~150
−40~150
UNIT
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
3−4D1A
STANDARD SOLDERING PAD
1
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