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1N5803

Description
Rectifier Diode, 1 Phase, 1 Element, 2.5A, 75V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size68KB,1 Pages
ManufacturerBkc Semiconductors Inc.
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1N5803 Overview

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 75V V(RRM), Silicon, DO-41,

1N5803 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
Is SamacsysN
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.875 V
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current35 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current2.5 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse current1 µA
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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