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JANTXV1N5811

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size609KB,4 Pages
ManufacturerVPT Inc
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JANTXV1N5811 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon,

JANTXV1N5811 Parametric

Parameter NameAttribute value
MakerVPT Inc
package instructionO-XALF-W2
Reach Compliance Codecompliant
Is SamacsysN
applicationULTRA FAST RECOVERY POWER
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusQualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.03 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5807(US), 1N5809(US), 1N5811(US)
Rectifier Diode Series
Ultrafast Recovery
Features
Popular JEDEC Registered Series
Voidless Hermetically Sealed Glass Package
Available in Axial Leaded and MELF packages
Extremely Robust Construction
Internal “Category I” Metallurgical Bonds
JAN, JANTX, JANTXV, and JANS available per
MIL-PRF-19500/477
Rev. V1
MELF
Description
The “Ultrafast Recovery” rectifier diode series is
military qualified to MIL-PRF-19500/477 and is ideal
for high reliability applications. These industry
recognized 6 Amp rated rectifiers for working peak
reverse voltages from 50 to 150 volts are
hermetically sealed with voidless glass construction.
The rectifier diode series are ideally suited for
switching power supplies or other applications
requiring extremely fast switching, low forward loss,
high forward surge current capability and low
thermal resistance. These diodes have a controlled
avalanche with peak reverse power capability.
Axial
Electrical Specifications: T
A
= +25°C
Working
Peak
Reverse
Voltage
(V
RWM
)
Typ.
(V)
1N5807
1N5807US
1N5809
1N5809US
1N5811
1N5811US
50
100
150
Breakdown
Voltage
(V
BR
)
@100 μA
Rectified
Current
(I
R
)
Part #
Forward
Voltage
(V
F
)
@4A
(8.3 ms pulse)
Max.
25°C
V
3.0
3.0
3.0
0.875
0.875
0.875
0.800
0.800
0.800
125°C
Reverse
Current
(I
R
)
@ VRM
Coeffecient
Max.
25°C
125°C
µA
5
5
5
175
175
175
Surge
Reverse
3
Current Recovery
(I
FSM
)
Time
4
(T
RR
)
Min.
mA
60
110
160
Avg.
I
01
@ T
L
= 75°C I
02
@ T
L
= 55°C
A
6.0
6.0
6.0
Max.
A
125
125
125
Max.
ns
30
30
30
1. I
01
is rated at T
L
= 75°C @ 3/8 Inch lead length. Derate @ 60 mA/°C for T
L
above 75°C.
2. I
02
is rated at T
A
= 55°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T
J
(max)
does not exceed 175°C.
3. T
A
= 25°C @ l
0
= 3 A, V
RWM
= rated 8.3 ms surges @ 1 minute intervals.
4. I
F
= 1.0 A, l
RM
= 1 A, I
R(REC)
= 0.01 A, di/dt = 100 A/µs minimum.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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