THIN FILM CHIP RESISTORS
MSTF 2 SERIES
MECHANICAL DATA
DAT
SIZE
SUBSTRATE
SUBSTRATE
RESISTOR
BOND PADS
0.020" x 0.020" (±0.003") x 0.010" (±0.003")
(S)SILICON, (A)ALUMINA, (Q)QUARTZ, OR (G)GLASS
TANT
ANTALUM
NICHROME OR TANTALUM NITRIDE
15,000 Å MINIMUM GOLD
10,000 Å MINIMUM ALUMINUM OPTIONAL
SUBSTRATE
BARE SUBSTRATE
GOLD BACK OPTIONAL
CHIP
CHIP
CHIP
CHIP
CHIP
RESISTORS
RESISTORS
RESISTORS
0.020"
BACKSIDE SURFACE
DAT
ELECTRICAL DATA
RESISTANCE RANGE
RESISTANCE
SILICON, QUARTZ, GLASS
ALUMINA*
ABSOLUTE TOLERANCE
NICHROME
1.5MΩ
2
Ω
TO 1.5M
Ω
250KΩ
2
Ω
TO 250K
Ω
0.1%, 0.5%, 1%, 2%, 5%, 10%
TO 0.01% AVAILABLE
STANDARD
±25ppm/°C STANDARD
OPTIONAL TO ±5ppm/°C (S, Q, G)
TANTALUM NITRIDE
ANTALUM
1.5MΩ
2
Ω
TO 1.5M
Ω
250KΩ
2
Ω
TO 250K
Ω
0.1%, 0.5%, 1%, 2%, 5%, 10%
TO 0.01% AVAILABLE
±150ppm/°C STANDARD
STANDARD
OPTIONAL TO ±10ppm/°C (S, Q, G)
OPTIONAL TO ±25ppm/°C (A)
0.020"
Layout varies with value
T.C.R.
DAT
SERIES DATA
CURRENT NOISE
DIELECTRIC BREAKDOWN
INSULATION RESISTANCE
INSULATION RESISTANCE
OPERATING VOLT
OPERATING VOLTAGE
RATING
POWER RATING
SILICON, ALUMINA
QUARTZ, GLASS
SHORT TERM OVERLOAD
HIGH TEMP EXPOSURE
THERMAL SHOCK
RESISTANCE
MOISTURE RESISTANCE
STABILITY
STABILITY
OPERATING
OPERATING TEMP RANGE
STRAY
STRAY DISTRIBUTED
CAPACIT
ACITANCE
CAPACITANCE
SILICON
ALUMINA
QUARTZ
101Ω
250KΩ
101
Ω
TO 250K
Ω
: -40dB
250KΩ
100Ω
≤
100
Ω
,
≥
250K
Ω
: -30dB
400V MIN.
10
12
Ω
MIN.
100 V MAX.
DERATED LINEARLY
250mW (70°C DERATED LINEARLY TO 150°C) P = E
2
/R
DERATED LINEARLY
50mW (70°C DERATED LINEARLY TO 150°C) P = E
2
/R
RATED
25°
±0.
0.2
5X RATED POWER, 25° C, 5 SEC., ±0.25% MAX.
∆
R/R: ±0.1% MSI TYPICAL
±0.25%
0.03
03%
150°C, 100 HRS., ±0.25% MAX.
∆
R/R: ±0.03% MSI TYPICAL
107F, ±0.25%
MIL-STD 202, METHOD 107F, ±0.25% MAX.
∆
R/R: ±0.1% MSI TYPICAL
±0.
0.5
0.1
MIL-STD 202, METHOD 106, ±0.5% MAX.
∆
R/R: ±0.1% MSI TYPICAL
POWER, ±0.5%
70°C,
1000 HRS., 70°C, 100% POWER, ±0.5% MAX.
∆
R/R: ±0.1% MSI TYPICAL
-55
-55°C TO +150°C
2pF
0.06pF
0.02pF
DESIGNATION
PART NUMBER DESIGNATION
MSTF 2
SERIES
X
SUBSTRATE
SUBSTRATE
A
G
Q
S
=
=
=
=
Alumina
Glass
Quartz
Silicon
X
RESISTIVE
FILM
N = Nichrome
T = Tantalum
Nitride
XXXXX
OHMIC VALUE
5-Digit
Number: 1st
4 Digits Are
Significant
With "R" As
Decimal
Point When
Required.
5th Digit
Represents
Number of
Zeros.
X
TOLERANCE
S
X
Q
B
D
F
G
J
K
= 0.01%*
= 0.02%*
= 0.05%*
= 0.1%
= 0.5%
= 1%
= 2%
= 5%
= 10%
A
B
C
D
E
X
OPTION
= ±50ppm/°C
= ±25ppm/°C
= ±10ppm/°C
†
= ±5ppm/°C
†
= Aluminum
Bond Pads
F = ±100ppm/°C
G = Gold Bond
Pads Std.**
GB = Gold Backside
MINI-SYSTEMS, INC.
THIN FILM DIVISION
DAVID
ATTLEBORO,
20 DAVID ROAD, N. ATTLEBORO, MA 02760
508-695-0203 FAX: 508-695-6076
DCN TF 101-G-0306
EXAMPLE: MSTF 2SN-50R00F-GB = 0.020" x 0.020", Silicon Substrate,
Resistor, 50Ω
Tol.,
Nichrome Resistor, 50
Ω
, ±1% Tol., ±50ppm/°C, Gold Backside.
†
Not Available on Alumina
* Value dependent on Alumina. Consult Sales.
**Always used when no other option is required.
ARM Technology
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