D
G
S
TO-247
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ARF448A(G)
ARF448B(G)
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
140W
65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 150 Volt, 40.68 MHz Characteristics:
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
¥
¥
¥
Output Power = 140 Watts.
Gain = 15dB (Class C)
Efficiency = 75%
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
qJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF448A/448B(G)
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
450
450
15
±30
230
0.55
-55 to 150
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
mA)
1
MIN
TYP
MAX
UNIT
Volts
450
3
25
250
±100
5
2
8.5
5
V
DS
(ON) On State Drain Voltage
I
DSS
I
GSS
g
fs
V
GS
(TH)
(I
D
(ON) = 7.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 7.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
mA
nA
mhos
7-2003
050-4908 Rev C
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
MIN
ARF448A/448B(G)
TYP
MAX
UNIT
1400
150
65
7
5
23
12
1700
200
100
15
10
40
25
ns
pF
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6W
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
h
y
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1
Test Conditions
f = 40.68 MHz
V
GS
= 0V
V
DD
= 150V
P
out
= 140W
MIN
TYP
MAX
UNIT
dB
%
13
70
15
75
No Degradation in Output Power
1
Pulse Test: Pulse width < 380
m
Duty Cycle < 2%
S,
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
25
20
GAIN (dB)
15
10
5
0
10
Class C
V
DD
= 150V
3000
Ciss
1000
500
P
out
= 250W
CAPACITANCE (pf)
Coss
Crss
100
50
30
40
50
60 65
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
20
1
5
10
50
150
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
25
I
D
, DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250mSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
70
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10mS
100mS
20
10
5
1mS
15
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
10
5
050-4908 Rev B
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
.1
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
1.2
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.1
1.0
0.9
0.8
0.7
ARF448A/448B(G)
I
D
, DRAIN CURRENT (AMPERES)
40
VGS=8, 10 & 15V
30
6.5V
20
6V
5.5V
5V
4.5V
0
1
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
10
0.6
-50 -25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
G
PS
, COMMON SOURCE AMPLIFIER GAIN
(dB)
300
Class C
V
DD
= 150V
17
Class C
V
DD
= 150V
P
OUT
, POWER OUT (WATTS)
240
f = 40.68 MHz
16
f = 40.68 MHz
180
15
120
60
14
0
0
4
6
8
10
P
IN
, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
2
60
120
180
240
300
P
OUT
, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
13
0
0.6
D=0.5
Z
JC
, THERMAL IMPEDANCE (°C/W)
q
0.2
0.1
0.05
0.05
0.02
0.01
0.005
0.01
SINGLE PULSE
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
qJC
+ TC
0.1
0.001
10
-5
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-4
10
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
2.0
13.5
27.0
40.0
65.0
Z
in
(W)
20.90 - j 9.2
2.40 - j 6.8
0.57 - j 2.6
0.31 - j 0.5
0.44
+
j 1.9
Z
OL
(W)
56.00 - j 06.0
37.00 - j 26.0
18.00 - j 25.0
9.90 - j 19.2
4.35 - j 11.4
7-2003
050-4908 Rev C
Z
in
-
gate shunted by 25W
Z
OL
-
conjugate of optimum load impedance for 250W at 150V
ARF448A/448B(G)
40.68 MHz Test Circuit
Parts List
C1 -- 1800pF 100V chip
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 1" #16 AWG into hairpin ~9.6nH
L2 -- 6t #16 AWG .25" ID ~165nH
L3 -- 10t #18 AWG .25" ID ~0.47µH
L4 -- VK200-4B ferrite choke ~3µH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 9:1 Broadband Transformer
L4
+
C6
L3
L2
C5
C4
RF Output
C7
-
150V
RF Input
L1
T1
C1
C2
R1
DUT
C3
40.48 MHz Test Circuit
TO-247 Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
Top View
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Dimensions in Millimeters and (Inches)
NOTE:
The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
Source
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Device
ARF448A
ARF448B
Gate
Drain
Source
Source
Drain
Gate
050-4908 Rev C
7-2003
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
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