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2KBPM06M

Description
Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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2KBPM06M Overview

Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN

2KBPM06M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PSIP-W4
Contacts4
Reach Compliance Codeunknow
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
JESD-609 codee0
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation4.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
2KBPM005M/3N253 - 2KBPM10M/3N259
Discrete POWER & Signal
Technologies
2KBPM005M/3N253 - 2KBPM10M/3N259
0.125 X 45
O
(3.2) Typ
0.600 (15.2)
0.560 (14.3)
Features
Surge overload rating: 60 amperes
peak.
Reliable low cost construction utilizing
molded plastic technique.
0.460 (11.7)
0.420 (10.7)
0.500 (12.7)
0.460 (11.7)
KBPM
0.600 Min
(15.2)
0.500 Min
(12.7)
2.0 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
T
stg
T
J
Average Rectified Current
Peak Forward Surge Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
T
A
= 25°C unless otherwise noted
0.060 Typ
(1.52)
0.160 (4.1)
0.140 (3.6)
0.034 (8.6)
0.028 (7.6)
Dimensions are in: inches (mm)
Parameter
Value
2.0
60
4.7
33
30
-55 to +165
-55 to +165
Units
A
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm).
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
M005M
253
M01M
254
100
70
100
M02M
255
200
140
200
M04M
256
400
280
400
5.0
500
1.1
15
25
M06M
257
600
420
600
M08M
258
800
560
800
M10M
259
1000
700
1000
Units
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage Drop,
per bridge
@ 3.14 A
2
I t rating for fusing
t < 8.35 ms
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
50
35
50
V
V
V
µA
µA
V
2
A Sec
pF
©1998
Fairchild Semiconductor Corporation
2KBP005M/3N253-2KBP10M/3N259, Rev. A

2KBPM06M Related Products

2KBPM06M 2KBPM005M 2KBPM02M 2KBPM10M 2KBPM04M 2KBPM01M 2KBPM08M
Description Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon, PLASTIC, KBPM, 4 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
Contacts 4 4 4 4 4 4 4
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Minimum breakdown voltage 600 V 50 V 200 V 1000 V 400 V 100 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 165 °C 165 °C 165 °C 165 °C 165 °C 165 °C 165 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 4.7 W 4.7 W 4.7 W 4.7 W 4.7 W 4.7 W 4.7 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 50 V 200 V 1000 V 400 V 100 V 800 V
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1

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