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Q62703-Q3509

Description
GaAs Infrared Emitter
File Size39KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

Q62703-Q3509 Overview

GaAs Infrared Emitter

GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
LD 242
ø0.45
2.54 mm
spacing
Chip position
ø4.3
ø4.1
1
0.9 .1
1.1 .9
0
2.7
1
14.5
12.5
3.6
3.0
ø5.5
ø5.2
GET06625
Anode (LD 242, BPX 63, SFH 464)
Cathode (SFH 483)
Approx. weight 0.5 g
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
GaAs-IR-Lumineszenzdiode, hergestellt im
q
q
q
q
q
Features
q
GaAs infrared emitting diode, fabricated in a
q
q
q
q
q
Schmelzepitaxieverfahren
Kathode galvanisch mit Gehäuseboden
verbunden
Hohe Zuverlässigkeit
Großer Öffnungskegel
Gehäusegleich mit BP 103, BPX 63,
SFH 464, SFH 483
Anwendungsklasse nach DIN 40 040 GQG
liquid phase epitaxy process
Cathode is electrically connected to the case
High reliability
Wide beam
Same package as BP 103, BPX 63,
SFH 464, SFH 483
DIN humidity category in acc. with
DIN 40 040 GQG
Anwendungen
q
IR-Fernsteuerungen und Tonübertragungen
q
Lichtschranken für Gleich- und
Applications
q
IR remote control and sound transmission
q
Photointerrupters
Wechsellichtbetrieb
Typ
Type
LD 242-2
LD 242-3
LD 242 E7800
Bestellnummer
Ordering Code
Q62703-Q198
Q62703-Q199
Q62703-Q3509
Gehäuse
Package
Bodenplatte nach 18 A3 DIN 41876 (TO-18), klares
Epoxy-Gießharz, linsenförmig im 2.54-mm-Raster
(
1
/
10
’’)
Base plate as per 18 A3 DIN 41876 (TO-18), transpar-
ent epoxy resin lens, solder tabs lead spacing 2.54 mm
(
1
/
10
’’)
Semiconductor Group
1
1998-07-15
fet06625

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Q62703-Q3509 Q62703-Q199 Q62703-Q198 LD242E7800 LD242 LD242-3 LD242-2
Description GaAs Infrared Emitter GaAs Infrared Emitter GaAs Infrared Emitter GaAs Infrared Emitter GaAs Infrared Emitter GaAs Infrared Emitter GaAs Infrared Emitter
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