PNP Silicon Switching Transistors
BSS 80
BSS 82
q
High DC current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BSS 79, BSS 81 (NPN)
Type
BSS 80 B
BSS 80 C
BSS 82 B
BSS 82 C
Marking
CHs
CJs
CLs
CMs
Ordering Code
(tape and reel)
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 77 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BSS 82
BSS 80
40
5
800
1
100
200
330
150
– 65 … + 150
60
60
Unit
V
mA
A
mA
mW
˚C
R
th JA
R
th JS
≤
290
≤
220
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
BSS 80
BSS 82
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BSS 80
BSS 82
Collector-base breakdown voltage
I
C
= 10
µ
A
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector-base cutoff current
V
CB
= 50 V
V
CB
= 50 V,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 3 V
DC current gain
I
C
= 100
µ
A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 150 mA,
V
CE
= 10 V
1)
I
C
= 500 mA,
V
CE
= 10 V
1)
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
BSS 80 B/82 B
BSS 80 C/82 C
V
CEsat
–
–
V
BEsat
–
–
–
–
1.3
2.6
–
–
0.4
1.6
V
(BR)CE0
40
60
V
(BR)CB0
V
(BR)EB0
I
CB0
–
–
I
EB0
h
FE
40
75
40
100
40
100
40
100
40
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
120
300
–
–
V
–
–
–
–
10
10
10
nA
µ
A
nA
–
60
5
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
BSS 80
BSS 82
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
Open-circuit output capacitance
V
CB
= 10 V,
f
= 1 MHz
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 150 mA
Delay time
Rise time
V
CC
= 6 V,
I
C
= 150 mA,
I
B1
=
I
B2
= 15 mA
Storage time
Fall time
f
T
C
obo
–
–
250
6
–
–
MHz
pF
Values
typ.
max.
Unit
t
d
t
r
t
stg
t
f
–
–
–
–
–
–
–
–
10
40
80
30
ns
ns
ns
ns
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
3
BSS 80
BSS 82
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
cb
=
f
(V
CB
)
f
= 1 MHz
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 20 V
Semiconductor Group
4
BSS 80
BSS 82
Saturation voltage
I
C
=
f
(V
BE sat
, V
CE sat
)
h
FE
= 10
Delay time
t
d
=
f
(I
C
)
Rise time
t
r
=
f
(I
C
)
Storage time
t
stg
=
f
(I
C
)
Fall time
t
f
=
f
(I
C
)
Semiconductor Group
5
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