Silizium-PIN-Fotodiode
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode
NEW: in SMT and as Reverse Gullwing
5.4
4.9
4.5
4.3
BPW 34
BPW 34 S
BPW 34 S (E9087)
feo06643
0.6
0.4
1.2
0.7
0.8
0.6
Cathode marking
4.0
3.7
Chip position
0.6
0.4
0.8
0.6
0.5
0.3
0.35
0.2
0.6
0.4
0 ... 5˚
5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm
GEO06643
3.5
3.0
0.6
0.4
2.2
1.9
BPW 34
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm
q
Kurze Schaltzeit (typ. 20 ns)
q
DIL-Plastikbauform mit hoher
Packungsdichte
q
BPW 34 S/(E9087): geeignet für
Vapor-Phase Löten und IR-Reflow
Löten (JEDEC level 4)
Anwendungen
q
Lichtschranken für Gleich- und
Wechsellichtbetrieb
q
IR-Fernsteuerungen
q
Industrieelektronik
q
“Messen/Steuern/Regeln”
1.8
1.4
Approx. weight 0.1 g
Features
q
Especially suitable for applications from
400 nm to 1100 nm
q
Short switching time (typ. 20 ns)
q
DIL plastic package with high packing
density
q
BPW 34 S/(E9087): suitable for
vapor-phase and IR-reflow soldering
(JEDEC level 4)
Applications
q
Photointerrupters
q
IR remote controls
q
Industrial electronics
q
For control and drive circuits
Semiconductor Group
1
1998-08-27
BPW 34, BPW 34 S
BPW 34 S (E9087)
Chip position
0...0.1
1.2
1.1
0.3
1.1
0.9
0.2
0.1
6.7
6.2
4.5
4.3
1.8
±0.2
0.9
0.7
4.0
3.7
1.7
1.5
0...5
˚
BPW 34 S
Photosensitive area
2.65 mm x 2.65 mm
Cathode lead
GEO06863
Chip position
0...0.1
1.2
1.1
0.3
1.1
0.9
0.2
0.1
6.7
6.2
4.5
4.3
1.8
±0.2
0.9
0.7
1.7
1.5
0...5
˚
GEO06916
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type
BPW 34
BPW 34 S
BPW 34 S (E9087)
Bestellnummer
Ordering Code
Q62702-P73
Q62702-P1602
Q62702-P1790
Semiconductor Group
2
1998-08-27
BPW34S
Photosensitive area
2.65 mm x 2.65 mm
Cathode lead
4.0
3.7
BPW 34 S (E9087)
feo06862
BPW 34, BPW 34 S
BPW 34 S (E9087)
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
T
A
= 25
°C
Total power dissipation
Symbol
Symbol
Wert
Value
– 40 ... + 85
32
150
Einheit
Unit
°C
V
mW
T
op
;
T
stg
V
R
P
tot
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K)
Bezeichnung
Description
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
Spektrale Fotoempfindlichkeit,
λ
= 850 nm
Spectral sensitivity
Quantenausbeute,
λ
= 850 nm
Quantum yield
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
Symbol
Symbol
Wert
Value
80 (≥ 50)
850
400 ... 1100
Einheit
Unit
nA/Ix
nm
nm
S
λ
S max
λ
A
L
×
B
L
×
W
ϕ
7.00
2.65
×
2.65
mm
2
mm
×
mm
±
60
2 (≤ 30)
0.62
0.90
365 (≥ 300)
Grad
deg.
nA
A/W
Electrons
Photon
mV
I
R
S
λ
η
V
O
Semiconductor Group
3
1998-08-27
BPW 34, BPW 34 S
BPW 34 S (E9087)
Kennwerte
(
T
A
= 25
°C,
Normlicht A,
T
= 2856 K)
Characteristics
(
T
A
= 25
°C,
standard light A,
T
= 2856 K) (cont’d)
Bezeichnung
Description
Kurzschlußstrom,
E
v
= 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
Ω;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 800
µA
Durchlaßspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
Kapazität,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
λ
= 850 nm
Nachweisgrenze,
V
R
= 10 V,
λ
= 850 nm
Detection limit
Symbol
Symbol
Wert
Value
80
20
Einheit
Unit
µA
ns
I
SC
t
r
,
t
f
V
F
C
0
TC
V
TC
I
NEP
1.3
72
– 2.6
0.18
4.1
×
10
– 14
V
pF
mV/K
%/K
W
√Hz
cm ·
√Hz
W
D*
6.6
×
10
12
Semiconductor Group
4
1998-08-27
BPW 34, BPW 34 S
BPW 34 S (E9087)
Relative spectral sensitivity
S
rel
=
f
(λ)
100
OHF00078
Photocurrent
I
P
=
f
(E
v
),
V
R
= 5 V
Open-circuit voltage
V
O
=
f
(E
v
)
Ι
P
10
3
µ
A
OHF01066
Total power dissipation
P
tot
=
f
(T
A
)
10
4
mV
160
mW
P
tot
140
120
100
OHF00958
S
rel
%
80
V
10
3
10
2
V
O
60
10
1
40
Ι
P
10
2
80
60
10
0
20
10
1
40
20
0
400 500 600 700 800 900 nm 1100
λ
10
-1
10
0
10
0
10
1
10
2
10
3
lx 10
4
0
0
20
40
60
E
V
80 ˚C 100
T
A
Dark current
I
R
=
f
(V
R
),
E
= 0
4000
OHF00080
Capacitance
C
=
f
(V
R
),
f
= 1 MHz,
E
= 0
100
OHF00081
Dark current
I
R
=
f
(T
A
),
V
R
= 10 V,
E
= 0
10
3
OHF00082
Ι
R
pA
C
pF
80
Ι
R
nA
10
2
3000
70
60
2000
50
40
30
10
1
1000
10
0
20
10
0
0
5
10
15
V
V
R
20
0
-2
10
10
-1
10
0
10
1
V 10
2
10
-1
0
20
40
60
V
R
80 ˚C 100
T
A
Directional characteristics
S
rel
=
f
(ϕ)
40
30
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Semiconductor Group
5
1998-08-27
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