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BPW34S(E9087)

Description
PIN PHOTO DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size47KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BPW34S(E9087) Overview

PIN PHOTO DIODE

BPW34S(E9087) Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum dark power30 nA
Infrared rangeYES
Nominal photocurrent0.08 mA
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPIN PHOTODIODE
peak wavelength850 nm
Minimum reverse breakdown voltage32 V
shapeSQUARE
size2.65 mm
Base Number Matches1
Silizium-PIN-Fotodiode
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode
NEW: in SMT and as Reverse Gullwing
5.4
4.9
4.5
4.3
BPW 34
BPW 34 S
BPW 34 S (E9087)
feo06643
0.6
0.4
1.2
0.7
0.8
0.6
Cathode marking
4.0
3.7
Chip position
0.6
0.4
0.8
0.6
0.5
0.3
0.35
0.2
0.6
0.4
0 ... 5˚
5.08 mm
spacing
Photosensitive area
2.65 mm x 2.65 mm
GEO06643
3.5
3.0
0.6
0.4
2.2
1.9
BPW 34
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm
q
Kurze Schaltzeit (typ. 20 ns)
q
DIL-Plastikbauform mit hoher
Packungsdichte
q
BPW 34 S/(E9087): geeignet für
Vapor-Phase Löten und IR-Reflow
Löten (JEDEC level 4)
Anwendungen
q
Lichtschranken für Gleich- und
Wechsellichtbetrieb
q
IR-Fernsteuerungen
q
Industrieelektronik
q
“Messen/Steuern/Regeln”
1.8
1.4
Approx. weight 0.1 g
Features
q
Especially suitable for applications from
400 nm to 1100 nm
q
Short switching time (typ. 20 ns)
q
DIL plastic package with high packing
density
q
BPW 34 S/(E9087): suitable for
vapor-phase and IR-reflow soldering
(JEDEC level 4)
Applications
q
Photointerrupters
q
IR remote controls
q
Industrial electronics
q
For control and drive circuits
Semiconductor Group
1
1998-08-27

BPW34S(E9087) Related Products

BPW34S(E9087) BPW34S Q62702-P73 Q62702-P1790 Q62702-P1602
Description PIN PHOTO DIODE PIN PHOTO DIODE PIN PHOTO DIODE PIN PHOTO DIODE PIN PHOTO DIODE
Number of functions 1 1 1 1 1
shape SQUARE RECTANGULAR SQUARE SQUARE SQUARE
Maximum operating temperature 80 °C - 85 Cel 85 Cel 85 Cel
Minimum operating temperature -40 °C - -40 Cel -40 Cel -40 Cel
Minimum reverse breakdown voltage 32 V - 32 V 32 V 32 V
size 2.65 mm - 2.65 mm 2.65 mm 2.65 mm
Processing package description - - Plastic, DIL-2 Plastic, DIL-2 Plastic, DIL-2
Lead-free - - Yes Yes Yes
EU RoHS regulations - - Yes Yes Yes
China RoHS regulations - - Yes Yes Yes
state - - ACTIVE ACTIVE ACTIVE
terminal coating - - tin tin tin
structure - - single single single
Optoelectronic device type - - Photodiode Photodiode Photodiode
Maximum dark current - - 30 nA 30 nA 30 nA
Infrared ranging - - Yes Yes Yes
Rated photocurrent - - 80 mA 80 mA 80 mA
Rated sensitivity wavelength - - 850 nm 850 nm 850 nm
Craftsmanship - - PIN PIN PIN
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