NPN Silicon High-Voltage Transistors
BFN 24
BFN 26
q
Suitable for video output stages in TV sets
and switching power supplies
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: BFN 25, BFN 27 (PNP)
Type
BFN 24
BFN 26
Marking
FHs
FJs
Ordering Code
(tape and reel)
Q62702-F1065
Q62702-F976
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
280
≤
210
Symbol
BFN 24
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
250
250
Values
BFN 26
300
300
5
200
500
100
200
360
150
Unit
V
mA
mW
˚C
– 65 … + 150
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
07.94
BFN 24
BFN 26
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
BFN 24
BFN 26
Collector-base breakdown voltage
I
C
= 100
µ
A
BFN 24
BFN 26
Emitter-base breakdown voltage
I
E
= 100
µ
A
Collector-base cutoff current
V
CB
= 200 V
V
CB
= 250 V
V
CB
= 200 V,
T
A
= 150 ˚C
V
CB
= 250 V,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 3 V
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 30 mA,
V
CE
= 10 V
1)
BFN 24
BFN 26
BFN 24
BFN 26
I
EB0
h
FE
25
40
40
30
V
CEsat
–
–
V
BEsat
–
–
–
–
0.4
0.5
0.9
–
–
–
–
–
–
–
–
V
V
(BR)CE0
250
300
V
(BR)CB0
250
300
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
nA
nA
µ
A
µ
A
nA
–
5
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
BFN 24
BFN 26
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
BFN 24
BFN 26
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 20 MHz
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
f
T
C
obo
–
–
70
1.5
–
–
MHz
pF
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
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