BFN24 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BFN24

BFN24: Description200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size139KB，4 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

Download Datasheet Parametric Compare View All

BFN24 Overview

200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BFN24 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
VCEsat-Max	0.4 V

Preview

Download Datasheet

View All

NPN Silicon High-Voltage Transistors

BFN 24

BFN 26

Suitable for video output stages in TV sets

and switching power supplies

High breakdown voltage

Low collector-emitter saturation voltage

Complementary types: BFN 25, BFN 27 (PNP)

Type

BFN 24

BFN 26

Marking

FHs

FJs

Ordering Code

(tape and reel)

Q62702-F1065

Q62702-F976

Pin Configuration

Package

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation,

= 74 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - soldering point

th JA

th JS

≤

280

≤

210

Symbol

BFN 24

CE0

CB0

EB0

tot

stg

250

Values

BFN 26

300

200

500

100

200

360

150

Unit

˚C

– 65 … + 150

K/W

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm

40 mm

1.5 mm/6 cm

Cu.

Semiconductor Group

07.94

BFN24 Related Products

	BFN24	BFN26	Q62702-F976	Q62702-F1065
Description	200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR	200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR	200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR	200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components	1	1	1	1
Number of terminals	3	3	3	3
surface mount	YES	YES	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

Recommended Resources

Bourns precision sensor series, do you know it?

High-current high-efficiency switching regulated power supply composed of LAS6351

Proximity switch remote control circuit

Two-wire conversion circuit

555 vehicle reversing anti-collision alarm circuit

Detection circuit of EXB series driver

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components