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BFN26

Description
200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size139KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BFN26 Overview

200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BFN26 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
VCEsat-Max0.5 V
Base Number Matches1
NPN Silicon High-Voltage Transistors
BFN 24
BFN 26
q
Suitable for video output stages in TV sets
and switching power supplies
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: BFN 25, BFN 27 (PNP)
Type
BFN 24
BFN 26
Marking
FHs
FJs
Ordering Code
(tape and reel)
Q62702-F1065
Q62702-F976
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
280
210
Symbol
BFN 24
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
250
250
Values
BFN 26
300
300
5
200
500
100
200
360
150
Unit
V
mA
mW
˚C
– 65 … + 150
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
07.94

BFN26 Related Products

BFN26 BFN24 Q62702-F976 Q62702-F1065
Description 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1 1
Number of terminals 3 3 3 3
surface mount YES YES Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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