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RJQ6003DPM-00T0

Description
600V - 20A - IGBT and Diode High Speed Power Switching
File Size108KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJQ6003DPM-00T0 Overview

600V - 20A - IGBT and Diode High Speed Power Switching

Preliminary Datasheet
RJQ6003DPM
600V - 20A - IGBT and Diode
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.37 V typ. (I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
r
= 85 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0846EJ0100
Rev.1.00
Aug 03, 2012
Outline
RENESAS Package code: PRSS0005ZB-A
(Package name: TO-3PFM-5)
2
Diode2
IGBT1
Diode1
5
3
1. NC
2. Cathode
3. Anode, Collector
4. Emitter
5. Gate
12
34
5
4
Absolute Maximum Ratings
IGBT1, Diode1
Item
Collector to emitter voltage/diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Symbol
V
CES
/V
R
V
GES
I
C Note1
I
C Note1
I
C(peak)
I
DF Note1
I
DF(peak) Note3
P
C Note2
j-c
j-cd
Tj
Tstg
Note3
(Ta = 25°C)
Ratings
600
±30
40
20
160
20
100
50
2.5
4.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
Notes: 1. Limited by Tj max.
2. Value at Tc = 25°C
3. Pulse width limited by maximum safe operating area.
R07DS0846EJ0100Rev.1.00
Aug 03, 2012
Page 1 of 8
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