KSD5701
KSD5701
High Voltage Color Display Horizontal
Deflection Output
(Damper Diode Built In)
• High Collector-Base Voltage : V
CBO
=1500V
• High Switching Speed : t
F
= 0.4µs (Max.)
• For Color TV
B
Equivalent Circuit
C
1
50Ω typ.
E
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
800
6
3.5
10
50
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
V
F
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Damper Diode Turn On Voltage
Fall Time
Test Condition
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 2.5A
I
C
= 2.5A, I
B
= 0.8A
I
C
= 2.5A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
I
F
= 3.5A
V
CC
= 200V, I
C
= 3A
I
B1
= 0.8A, I
B2
= - 1.6A
R
L
= 66.7Ω
3
2
0.4
Min.
40
10
2.5
Typ.
Max.
10
250
30
5
1.5
V
V
MHz
V
µs
Units
µA
mA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD5701
Typical Characteristics
8
100
V
CE
= 5V
7
I
C
[A], COLLECTOR CURRENT
5
4
3
I
B
= 2.0A
I
B
= 1.8A
I
B
= 1.6A
I
B
= 1.4A
I
B
= 1.2A
I
B
= 1.0A
I
B
= 0.8A
I
B
= 0.6A
I
B
= 0.4A
I
B
= 0.2A
h
FE
, DC CURRENT GAIN
6
10
2
1
0
0
1
2
3
4
5
6
7
8
9
10
1
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
8
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 5V
7
I
C
[A], COLLECTOR CURRENT
10
I
C
= 5 I
B
10
6
5
1
4
I
C
= 3 I
B
3
0.1
2
1
0.01
0.1
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
t
F
[
µ
S], COLLECTOR CURRENT FALL TIME
1.0
10
0.8
t
STG
[
µ
S], STORAGE TIME
8
6
0.6
I
C
= 1.5A
4
I
C
= 2.5A
I
C
= 2.0A
0.4
I
C
= 2.5A
I
C
= 2.0A
I
C
= 1.5A
2
0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
dI
B
/dt[A/
µ
S], BASE CURRETN GRADIENT
dI
B
/dt[A/
µ
S], BASE CURRETN GRADIENT
Figure 5. Switching Characteristic 1
Figure 6. Switching Characteristic 2
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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