IRFV360DPBF datasheet, PDF - EEWORLD Datasheet

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IRFV360DPBF: DescriptionPower Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA; CategoryDiscrete semiconductor The transistor; File Size207KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFV360DPBF Overview

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA

IRFV360DPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	980 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	300 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	219 ns
Maximum opening time (tons)	173 ns
Base Number Matches	1

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IRFV360DPBF Related Products

	IRFV360DPBF	IRFV360PBF	IRFV360	IRFV360UPBF
Description	Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA	Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA	repetitive avalanche rated and dv/dt rated hexfet transistor	Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
Is it lead-free?	Lead free	Lead free	Contains lead	Lead free
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code	compliant	compliant	unknown	compliant
Avalanche Energy Efficiency Rating (Eas)	980 mJ	980 mJ	980 mJ	980 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	400 V	400 V	400 V
Maximum drain current (ID)	25 A	25 A	25 A	25 A
Maximum drain-source on-resistance	0.23 Ω	0.2 Ω	0.2 Ω	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA	TO-258AA	TO-258AA	TO-258AA
JESD-30 code	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A	100 A	100 A	100 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Is it Rohs certified?	conform to	conform to	-	conform to
Maximum power consumption environment	300 W	300 W	-	300 W
Maximum off time (toff)	219 ns	219 ns	-	219 ns
Maximum opening time (tons)	173 ns	173 ns	-	173 ns

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