IRFV360 datasheet, PDF - EEWORLD Datasheet

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IRFV360: Descriptionrepetitive avalanche rated and dv/dt rated hexfet transistor; CategoryDiscrete semiconductor The transistor; File Size207KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFV360 Overview

repetitive avalanche rated and dv/dt rated hexfet transistor

IRFV360 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	980 mJ
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-XSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFV360 Related Products

	IRFV360	IRFV360DPBF	IRFV360PBF	IRFV360UPBF
Description	repetitive avalanche rated and dv/dt rated hexfet transistor	Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA	Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA	Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
Is it lead-free?	Contains lead	Lead free	Lead free	Lead free
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3	FLANGE MOUNT, R-XSFM-P3
Reach Compliance Code	unknown	compliant	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	980 mJ	980 mJ	980 mJ	980 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	400 V	400 V	400 V
Maximum drain current (ID)	25 A	25 A	25 A	25 A
Maximum drain-source on-resistance	0.2 Ω	0.23 Ω	0.2 Ω	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA	TO-258AA	TO-258AA	TO-258AA
JESD-30 code	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3	R-XSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A	100 A	100 A	100 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Is it Rohs certified?	-	conform to	conform to	conform to
Maximum power consumption environment	-	300 W	300 W	300 W
Maximum off time (toff)	-	219 ns	219 ns	219 ns
Maximum opening time (tons)	-	173 ns	173 ns	173 ns

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