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3SK239A

Description
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CMPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size42KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

3SK239A Overview

UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, CMPAK-4

3SK239A Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.1 W
Minimum power gain (Gp)17 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
3SK239A
GaAs N-Channel Dual Gate MES FET
Application
UHF RF amplifier
Features
Excellent low noise characteristics
(NF = 1.3 dB typ at f = 900 MHz)
Capable of low voltage operation
Outline
CMPAK–4
2
3
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
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