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2N6050

Description
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size88KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN

2N6050 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1516146818
Parts packaging codeTO-3
package instruction,
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)12 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JESD-609 codee0
Maximum operating temperature200 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)150 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)4 MHz
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