2N6608 datasheet, PDF - EEWORLD Datasheet

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2N6608: Description4 A, 400 V, SCR, TO-202; CategoryAnalog mixed-signal IC Trigger device; File Size579KB，4 Pages; ManufacturerCentral Semiconductor; Related ProductsFound18parts with similar functions to 2N6608

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2N6608 Overview

4 A, 400 V, SCR, TO-202

2N6608 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	6 A
Number of components	1
Number of terminals	3
Maximum on-state current	275 A
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1.6 A
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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CS202-4B

CS202-4D

CS202-4M

CS202-4N

4.0 AMP SCR

200 THRU 800 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS202-4B series

type is an epoxy molded silicon controlled rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=85°C)

Peak One Cycle Surge (t=10ms)

t Value for Fusing (t=10ms)

Peak Gate Power (tp=20μs)

Average Gate Power Dissipation

Peak Gate Current (tp=20μs)

Critical Rate of Rise of On-State Current

Storage Temperature

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

IDRM, IRRM

IGT

VGT

VTM

dv/dt

SYMBOL

VDRM

VRRM

IT(RMS)

ITSM

PGM

PG(AV)

IGM

di/dt

Tstg

CS202

-4B

200

CS202

-4D

400

4.0

4.5

3.0

0.2

1.2

CS202

-4M

600

CS202

-4N

800

UNITS

A/μs

°C

°C/W

-40 to +150

-40 to +125

7.5

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

Rated VDRM, VRRM, RGK=1.0KΩ

Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

VD=12V, RL=10Ω

IT=50mA, RGK=1.0KΩ

VD=12V, RL=10Ω

ITM=8.0A, tp=380μs

VD=

⅔

VDRM, RGK=1.0KΩ, TC=125°C

TYP

MAX

200

2.0

0.8

1.8

UNITS

μA

V/μs

0.25

0.55

1.6

R4 (23-January 2012)

Recommended Resources

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2N6608 Similar Products

Part Number	Manufacturer	Description
2N6608LEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 1.6A I(T)RMS, 200V V(RRM), 1 Element, TO-18,
2N3027	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18
2N2328	SSDI	Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN
2N6396	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM)
2N6402	Toshiba(东芝)	SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220
C126F	Semitronics Corp	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
BT151X-650R,127	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3
2N1772A	SSDI	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N1776A	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N879	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 0.55A I(T)RMS, 350mA I(T), 100V V(DRM), 1 Element, TO-18, TO-18, 3 PIN
2N1880	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5
C15F	Semitronics Corp	Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64
MCR718	Central Semiconductor	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS
2N2327	New Jersey Semiconductor	Thyristor SCR 250V 15A 3-Pin TO-39
C106E1	Central Semiconductor	4 A, 400 V, SCR, TO-202
2N1772	Semitronics Corp	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-64
CS29-08IO1C	IXYS	Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN
S2025L	Littelfuse	SCRs 25A 200V

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