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MHVIC910HNR2

Description
IC RF power amp 960mhz 16-pfp
CategoryTopical application    Wireless rf/communication   
File Size717KB,12 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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IC RF power amp 960mhz 16-pfp

MHVIC910HNR2 Parametric

Parameter NameAttribute value
Datasheets
MHVIC910HNR2
PCN Obsolescence/ EOL
RF Devices 01/Jul/2010
Standard Package1,500
CategoryRF/IF and RFID
FamilyRF Amplifiers
PackagingTape & Reel (TR)
Frequency921MHz ~ 960MHz
P1dB40dBm (10W)
Gai39dB
Noise Figure-
RF TypeCellular, GSM
Voltage - Supply26V
Current - Supply150mA
Test Frequency-
Package / Case16-SOP (0.276", 7.00mm Width)
Supplier Device Package16-PFP
Freescale Semiconductor
Technical Data
Document Number: MHVIC910HNR2
Rev. 9, 5/2006
LIFETIME BUY
The MHVIC910HNR2 integrated circuit is designed for GSM base stations,
uses Freescale’s newest High Voltage (26 Volts) LDMOS IC technology, and
contains a three--stage amplifier. Target applications include macrocell (driver
function) and microcell base stations (final stage). The device is in a PFP--16
Power Flat Pack package which gives excellent thermal performances through
a solderable backside contact.
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 150 mA, P
out
= 10 Watts,
Full Frequency Band (921--960 MHz)
Power Gain — 39 dB (Typ)
Power Added Efficiency — 48% (Typ)
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW
Output Power
Stable into a 10:1 VSWR. All Spurs Below --60 dBc @ 0 to 40 dBm CW
P
out
.
Features
On--Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated ESD Protection
Usable Frequency Range — 921 to 960 MHz
RoHS Compliant
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
V
DD
V
GS
P
in
T
C
T
stg
T
ch
MHVIC910HNR2
960 MHz, 10 W, 26 V
GSM CELLULAR
RF LDMOS INTEGRATED CIRCUIT
16
1
CASE 978-
-03
PFP-
-16
Value
28
6
5
-- 30 to + 85
-- 65 to + 150
150
Unit
Vdc
Vdc
dBm
°C
°C
°C
Drain Supply Voltage
Gate Supply Voltage
RF Input Power
Case Operating Temperature
Storage Temperature Range
Operating Channel Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.9
Unit
°C/W
V
D1
V
D2
V
D3
N.C.
V
D2
V
D1
GND
1
2
3
4
5
6
7
8
(Top View)
16
N.C.
15 V
D3
/RF
out
14 V
D3
/RF
out
13 V
D3
/RF
out
12 V
D3
/RF
out
11 V
D3
/RF
out
10 N.C.
9 N.C.
RF
in
RF
out
RF
in
V
GATE1
V
GATE2
V
GATE3
V
GATE1
V
GATE2
V
GATE3
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHVIC910HNR2
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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