TN2535
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
Low threshold
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2535
Package Option
TO-243AA (SOT-89)
TN2535N8-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
350
10
1.0
2.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
TO-243AA (SOT-89) (N8)
GATE
SOURCE
DRAIN
Product Marking
TN5SW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TN2535
Thermal Characteristics
Package
TO-243AA (SOT-89)
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
A
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
†
I
DRM
(A)
283
1.6
1.6
‡
15
78
‡
283
1.6
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate threshold voltage
A
= 25
O
C unless otherwise specified)
Min
350
1.0
-
-
-
0.5
1.0
-
-
-
-
125
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
Max
-
2.0
-4.0
100
1.0
-
-
15
10
10
0.75
-
125
70
25
20
15
25
20
1.8
-
Units
V
V
nA
µA
A
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 20mA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 200mA
V
GS
= 10V, I
D
= 200mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 200mA
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho V
DS
= 25V, I
D
= 100mA
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TN2535
Typical Performance Curves
Output Characteristics
2.0
Saturation Characteristics
V
GS
=10V
V
GS
=8V
V
GS
=6V
V
GS
=5V
1.2
1.6
1.0
V
GS
= 10V
8.0V
6.0V
5.0V
ID (Amperes)
ID (Amperes)
0.8
1.2
V
GS
= 4.0V
0.6
0.8
V
GS
=4V
0.4
V
GS
= 3.0V
0.4
V
GS
=3V
0.0
0
10
20
30
40
50
0.2
0.0
0
2
4
6
8
10
VDS (Volts)
Transconductance vs. Drain Current
0.8
VDS (Volts)
Power Dissipation vs. Ambient Temperature
2.0
V DS =15V
TO-243AA
0.6
T A =-55
°
C
1.6
GFS (Siemens)
PD (Watts)
T A =25
°
C
1.2
0.4
0.8
0.2
0.4
T A =125
°
C
0.0
0.0
0.4
0.8
1.2
1.6
0.0
0
25
50
75
100
125
150
ID (Amperes)
Maximum Rated Safe Operating Area
10
T A =25
°
C
TA (
°
C)
Thermal Response Characteristics
1.0
Thermal Resistance (normalized)
TO-243AA (Pulsed)
0.8
ID (Amperes)
1.0
0.6
TO-243AA (DC)
0.4
TO-243AA
T
A
= 25°C
P
D
= 1.6W
0.1
0.2
0.01
1
10
100
1000
0
0.001
0.01
0.1
1
10
VDS (Volts)
tp (seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TN2535
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.2
On Resistance vs. Drain Current
20
BV @ 250µA
VGS = 3V
16
BVDSS (normalized)
RDS(ON) (ohms)
1.1
VGS = 4.5V
12
1.0
8
VGS = 10V
0.9
4
0.8
-50
0
50
100
150
0
0.0
0.4
0.8
1.2
1.6
2.0
TJ (
°
C)
Transfer Characteristics
2.0
ID (Amperes)
VGS(th) and RDS(ON) w/ Temperature
1.2
TA = 25
°
C
2.4
ID (Amperes)
TA = -55
°
C
1.2
TA = 125
°
C
1.0
1.6
0.8
0.9
1.2
0.4
0.8
VDS = 15V
0.8
RDS(ON) @ 10V, 0.2A
10
0.0
0
2
4
6
8
0.7
-50
0.4
0
50
100
150
VGS (Volts)
TJ (
°
C)
Capacitance vs. Drain Source Voltage
200
Gate Drive Dynamic Characteristics
10
f = 1MHz
ID = 283mA
VDS=10V
8
150
C (picofarads)
VDS=40V
V
GS
(volts)
6
100
295pF
4
CISS
50
2
COSS
0
0
CRSS
10
20
30
40
92pF
0
0.0
0.4
0.8
1.2
1.6
2.0
VDS (Volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
RDS(ON) (normalized)
VGS(th) (normalized)
1.6
1.1
VGS(th) @ 1mA
2.0
TN2535
3-Lead TO-243AA (SOT-89) Package Outline (N8)
b
b1
Symbol
Dimensions
(mm)
MIN
NOM
MAX
A
1.40
-
1.60
b
0.44
-
0.56
b1
0.36
-
0.48
C
0.35
-
0.44
D
4.40
-
4.60
D1
1.62
-
1.83
E
2.29
-
2.60
E1
2.13
-
2.29
e
1.50
BSC
e1
3.00
BSC
H
3.94
-
4.25
L
0.89
-
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale.
Supertex Doc. #:
DSPD-3TO243AAN8, Version D070908.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN2535
A022309
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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