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BC372PSTOA

Description
Bipolar small signal -
Categorysemiconductor    Discrete semiconductor   
File Size21KB,1 Pages
ManufacturerAll Sensors
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BC372PSTOA Overview

Bipolar small signal -

BC372PSTOA Parametric

Parameter NameAttribute value
MakerAll Sensors
RoHSno
ConfigurationSingle
Transistor polarityNPN
Installation styleThrough Hole
Package/boxTO-92
Collector-emitter maximum voltage VCEO100 V
Emitter-Base voltage VEBO12 V
Maximum DC collector current1 A
Power dissipation1000 mW
Maximum operating frequency100 MHz (Min)
Maximum operating temperature+ 200 C
Minimum operating temperature- 55 C
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 – SEPT 93
FEATURES
* 100 Volt V
CEO
* Gain of 8k at I
C
=250mA
* I
C
=1 Amp
BC372
E
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
100
100
12
1
625
-55 to +150
TO92
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
MIN.
100
100
12
100
100
1.0
2
10K
8K
100
25
3-16
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=100
µ
A, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=250mA, I
B
=0.25mA
I
C
=250mA, I
B
=0.25mA
I
C
=100mA, V
CE
=5V*
I
C
=250mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo

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BC372PSTOA BC372P BC372PSTOB BC372PSTZ
Description Bipolar small signal - Bipolar small signal - Bipolar small signal - Bipolar small signal -
Maker All Sensors All Sensors All Sensors All Sensors
RoHS no no no no
Configuration Single Single Single Single
Transistor polarity NPN NPN NPN NPN
Installation style Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 TO-92
Collector-emitter maximum voltage VCEO 100 V 100 V 100 V 100 V
Emitter-Base voltage VEBO 12 V 12 V 12 V 12 V
Maximum DC collector current 1 A 1 A 1 A 1 A
Power dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Maximum operating frequency 100 MHz (Min) 100 MHz (Min) 100 MHz (Min) 100 MHz (Min)
Maximum operating temperature + 200 C + 200 C + 200 C + 200 C
Minimum operating temperature - 55 C - 55 C - 55 C - 55 C
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