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TP2540N3-P014

Description
mosfet small signal 400v 25ohm
Categorysemiconductor    Discrete semiconductor   
File Size592KB,5 Pages
ManufacturerSupertex
Download Datasheet Parametric View All

TP2540N3-P014 Overview

mosfet small signal 400v 25ohm

TP2540N3-P014 Parametric

Parameter NameAttribute value
MakerSupertex
Product CategoryMOSFET small signal
RoHSno
ConfigurationSingle
Transistor polarityP-Channel
Resistor drain/source RDS (on)25 Ohms
Drain/source breakdown voltage- 400 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current- 86 mA
Power dissipation0.74 W
Maximum operating temperature+ 150 C
Installation styleThrough Hole
Package/boxTO-92
Minimum operating temperature- 55 C
Supertex inc.
P-Channel Enhancement Mode
Vertical DMOS FETs
Features
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TP2535
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TP2535
Package Option
TO-92
TP2535N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
V
GS(th)
(max)
(V)
I
D(ON)
(min)
(A)
-350
25
-2.4
-0.4
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
TO-92 (N3)
GATE
Product Marking
SiTP
25 3 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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