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VN0550N3-P014

Description
mosfet small signal 500v 60ohm
Categorysemiconductor    Discrete semiconductor   
File Size460KB,5 Pages
ManufacturerSupertex
Download Datasheet Parametric Compare View All

VN0550N3-P014 Overview

mosfet small signal 500v 60ohm

VN0550N3-P014 Parametric

Parameter NameAttribute value
MakerSupertex
Product CategoryMOSFET small signal
RoHSno
ConfigurationSingle
Transistor polarityN-Channel
Resistor drain/source RDS (on)60 Ohms
Drain/source breakdown voltage500 V
Gate/source breakdown voltage+/- 20 V
Drain continuous current78 mA
Power dissipation1 W
Maximum operating temperature+ 150 C
Installation styleThrough Hole
Package/boxTO-92
Minimum operating temperature- 55 C
VN0550
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
The Supertex VN0550 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN0550
Package Option
TO-92
VN0550N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
500
60
150
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
GATE
TO-92 (N3)
Product Marking
Si V N
05 50
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

VN0550N3-P014 Related Products

VN0550N3-P014 VN0550N3-P003-G VN0550N3-P013-G VN0550N3 VN0550N3-P013 VN0550N3-P014-G VN0550N3-P002-G VN0550N3-P003 VN0550N3-P002
Description mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm mosfet small signal 500v 60ohm
Maker Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex Supertex
Configuration Single Single Single SINGLE WITH BUILT-IN DIODE Single Single Single Single Single
Maximum operating temperature + 150 C + 150 C + 150 C 150 °C + 150 C + 150 C + 150 C + 150 C + 150 C
Product Category MOSFET small signal MOSFET small signal MOSFET small signal - MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal MOSFET small signal
RoHS no yes yes - no yes yes no no
Transistor polarity N-Channel N-Channel N-Channel - N-Channel N-Channel N-Channel N-Channel N-Channel
Resistor drain/source RDS (on) 60 Ohms 60 Ohms 60 Ohms - 60 Ohms 60 Ohms 60 Ohms 60 Ohms 60 Ohms
Drain/source breakdown voltage 500 V 500 V 500 V - 500 V 500 V 500 V 500 V 500 V
Gate/source breakdown voltage +/- 20 V +/- 20 V +/- 20 V - +/- 20 V +/- 20 V +/- 20 V +/- 20 V +/- 20 V
Drain continuous current 78 mA 78 mA 78 mA - 78 mA 78 mA 78 mA 78 mA 78 mA
Power dissipation 1 W 1 W 1 W - 1 W 1 W 1 W 1 W 1 W
Installation style Through Hole Through Hole Through Hole - Through Hole Through Hole Through Hole Through Hole Through Hole
Package/box TO-92 TO-92 TO-92 - TO-92 TO-92 TO-92 TO-92 TO-92
Minimum operating temperature - 55 C - 55 C - 55 C - - 55 C - 55 C - 55 C - 55 C - 55 C
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