VN0550N3-P002-G datasheet, PDF

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VN0550N3-P002-G: Descriptionmosfet small signal 500v 60ohm; Categorysemiconductor Discrete semiconductor; File Size460KB，5 Pages; ManufacturerSupertex; Environmental Compliance

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VN0550N3-P002-G Overview

mosfet small signal 500v 60ohm

VN0550N3-P002-G Parametric

Parameter Name	Attribute value
Maker	Supertex
Product Category	MOSFET small signal
RoHS	yes
Configuration	Single
Transistor polarity	N-Channel
Resistor drain/source RDS (on)	60 Ohms
Drain/source breakdown voltage	500 V
Gate/source breakdown voltage	+/- 20 V
Drain continuous current	78 mA
Power dissipation	1 W
Maximum operating temperature	+ 150 C
Installation style	Through Hole
Package/box	TO-92
Encapsulation	Reel
Minimum operating temperature	- 55 C

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VN0550

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

ISS

and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

General Description

The Supertex VN0550 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Applications

►

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Device

VN0550

Package Option

TO-92

VN0550N3-G

DSS

/BV

DGS

(V)

DS(ON)

(max)

(Ω)

D(ON)

(min)

(mA)

500

150

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁguration

DRAIN

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Value

DSS

DGS

±20V

-55°C to +150°C

+300°C

SOURCE

GATE

TO-92 (N3)

Product Marking

Si V N

05 50

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92 (N3)

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Distance of 1.6mm from case for 10 seconds.

Package may or may not include the following marks: Si or

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

●

Tel: 408-222-8888

●

www.supertex.com

VN0550N3-P002-G Related Products

	VN0550N3-P002-G	VN0550N3-P003-G	VN0550N3-P013-G	VN0550N3	VN0550N3-P014	VN0550N3-P013	VN0550N3-P014-G	VN0550N3-P003	VN0550N3-P002
Description	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm	mosfet small signal 500v 60ohm
Maker	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex
Configuration	Single	Single	Single	SINGLE WITH BUILT-IN DIODE	Single	Single	Single	Single	Single
Maximum operating temperature	+ 150 C	+ 150 C	+ 150 C	150 °C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Product Category	MOSFET small signal	MOSFET small signal	MOSFET small signal	-	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal	MOSFET small signal
RoHS	yes	yes	yes	-	no	no	yes	no	no
Transistor polarity	N-Channel	N-Channel	N-Channel	-	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Resistor drain/source RDS (on)	60 Ohms	60 Ohms	60 Ohms	-	60 Ohms	60 Ohms	60 Ohms	60 Ohms	60 Ohms
Drain/source breakdown voltage	500 V	500 V	500 V	-	500 V	500 V	500 V	500 V	500 V
Gate/source breakdown voltage	+/- 20 V	+/- 20 V	+/- 20 V	-	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V	+/- 20 V
Drain continuous current	78 mA	78 mA	78 mA	-	78 mA	78 mA	78 mA	78 mA	78 mA
Power dissipation	1 W	1 W	1 W	-	1 W	1 W	1 W	1 W	1 W
Installation style	Through Hole	Through Hole	Through Hole	-	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92	-	TO-92	TO-92	TO-92	TO-92	TO-92
Minimum operating temperature	- 55 C	- 55 C	- 55 C	-	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C

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