VN0550
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
The Supertex VN0550 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN0550
Package Option
TO-92
VN0550N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
500
60
150
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
GATE
TO-92 (N3)
Product Marking
Si V N
05 50
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VN0550
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
50
(mA)
I
DRM
50
250
1.0
125
170
250
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Zero gate voltage drain current
Min
500
2.0
-
-
-
-
-
150
-
-
-
50
-
-
-
-
-
-
-
-
-
Typ
-
-
-3.8
-
-
-
100
350
45
40
1.0
100
45
8.0
2.0
-
-
-
0.8
300
Max
-
4.0
-5.0
100
10
1.0
-
-
-
60
1.7
-
55
10
5.0
10
15
10
10
-
-
Units
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, I
D
= 50mA
V
GS
= 10V, I
D
= 50mA
V
DS
= 25V, I
D
= 50mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 500mA
V
GS
= 0V, I
SD
= 500mA
On-state drain current
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Rise time
Turn-off time
Fall time
Diode forward voltage drop
Reverse recovery time
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VN0550
Typical Performance Curves
Output Characteristics
0.5
0.25
Saturation Characteristics
VGS = 10V
0.4
8V
6V
0.20
V
GS
= 10V
8V
6V
I
D
(amperes)
I
D
(amperes)
0.3
0.15
0.2
0.10
0.1
0.05
4V
4V
0
0
0
10
V
DS
(volts)
20
30
40
50
0
2
4
6
8
10
V
DS
(volts)
10
0.40
Transconductance vs. Drain Current
V
DS
= 25V
Power Dissipation vs. Case Temperature
0.32
8
G
FS
(siemens)
0.16
T
A
= 25°C
P
D
(watts)
0.24
T
A
= -55°C
6
4
0.08
T
A
= 125°C
2
TO-92
0
0
0.1
0.2
0.3
0.4
0.5
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
1.0
T
C
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
0.1
0.6
TO-92 (DC)
0.4
0.01
0.2
TO-92
P
D
= 1W
T
C
= 25°C
0.001
1
TC = 25°C
10
100
1000
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
VN0550
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
80
On-Resistance vs. Drain Current
100
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
60
V
GS
= 10V
1.0
40
20
0.9
0
-50
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
T
j
(°C)
Transfer Characteristics
0.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
1.8
V
DS
= 25V
0.4
R
DS(ON)
@ 10V, 50mA
1.2
1.4
0.3
V
(th)
@ 1mA
1.0
1.0
150°C
0.2
0.8
0.6
0.1
0.6
0
0.2
0
2
4
6
8
10
-50
0
50
100
150
V
GS
(volts)
100
T
j
(°C)
10
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
V
DS
= 10V
75
8
105 pF
C (picofarads)
50
C
ISS
V
GS
(volts)
6
4
V
DS
= 40V
112 pF
25
C
OSS
0
0
10
20
30
2
C
RSS
40
50 pF
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55 ° C
25°C
I
D
(amperes)
VN0550
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN0550
A022109
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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