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DN3135N8

Description
mosfet small signal 350v 35ohm
CategoryDiscrete semiconductor    The transistor   
File Size420KB,4 Pages
ManufacturerSupertex
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DN3135N8 Overview

mosfet small signal 350v 35ohm

DN3135N8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSupertex
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW THRESHOLD
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)0.135 A
Maximum drain-source on-resistance35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
DN3135
General Description
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
The Supertex DN3135 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Device
DN3135
Package Options
TO-236AB (SOT-23)
DN3135K1-G
TO-243AA (SOT-89)
DN3135N8-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
350
35
180
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
DN1SW
GATE
SOURCE
GATE
SOURCE
DRAIN
TO-236AB (SOT-23) (K1)
TO-243AA (SOT-89) (N8)
Product Marking
N1SW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23) (K1)
W = Code for week sealed
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Supertex inc.

DN3135N8 Related Products

DN3135N8 DN3135K1
Description mosfet small signal 350v 35ohm mosfet small signal 350v 35ohm
Is it Rohs certified? incompatible incompatible
Maker Supertex Supertex
Parts packaging code SOT-89 SOT-23
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 350 V 350 V
Maximum drain current (ID) 0.135 A 0.72 A
Maximum drain-source on-resistance 35 Ω 35 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 10 pF 10 pF
JEDEC-95 code TO-243AA TO-236AB
JESD-30 code R-PSSO-F3 R-PDSO-G3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.3 W 0.36 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form FLAT GULL WING
Terminal location SINGLE DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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