INTEGRATED CIRCUITS
74LV10
Triple 3-input NAND gate
Product specification
Supersedes data of 1997 Feb 12
IC24 Data Handbook
1998 Apr 20
Philips
Semiconductors
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74LV10
FEATURES
•
Optimized for Low Voltage applications: 1.0 to 3.6 V
•
Accepts TTL input levels between V
CC
= 2.7 V and V
CC
= 3.6 V
•
Typical V
OLP
(output ground bounce) < 0.8 V at V
CC
= 3.3 V,
•
Typical V
OHV
(output V
OH
undershoot) > 2 V at V
CC
= 3.3 V,
•
Output capability: standard
•
I
CC
category: SSI
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25°C; t
r
= t
f
v2.5
ns
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
Propagation delay
nA, nB, nC to nY
Input capacitance
Power dissipation capacitance per gate
T
amb
= 25°C.
T
amb
= 25°C.
DESCRIPTION
The 74LV10 is a low-voltage Si-gate CMOS device and is pin and
function compatible with 74HC/HCT10.
The 74LV10 provides the 3-input NAND function.
CONDITIONS
C
L
= 15 pF;
V
CC
= 3.3 V
See Notes 1 and 2
TYPICAL
9
3.5
12
UNIT
ns
pF
pF
NOTES:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW)
V
CC2
f
o
) where:
P
D
= C
PD
×
V
CC2
×
f
i
)
(C
L
f
i
= input frequency in MHz; C
L
= output load capacitance in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
V
CC2
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
ORDERING INFORMATION
PACKAGES
14-Pin Plastic DIL
14-Pin Plastic SO
14-Pin Plastic SSOP Type II
14-Pin Plastic TSSOP Type I
TEMPERATURE RANGE
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
OUTSIDE NORTH AMERICA
74LV10 N
74LV10 D
74LV10 DB
74LV10 PW
NORTH AMERICA
74LV10 N
74LV10 D
74LV10 DB
74LV10PW DH
PKG. DWG. #
SOT27-1
SOT108-1
SOT337-1
SOT402-1
PIN DESCRIPTION
PIN NUMBER
1, 3, 9
2, 4, 10
7
12, 6, 8
13, 5, 11
14
SYMBOL
1A – 3A
1B – 3B
GND
1Y – 3Y
1C – 3C
V
CC
NAME AND FUNCTION
Data inputs
Data inputs
Ground (0 V)
Data outputs
Data inputs
Positive supply voltage
FUNCTION TABLE
INPUTS
nA
L
L
L
L
H
H
H
H
NOTES:
H = HIGH voltage level
L = LOW voltage level
nB
L
L
H
H
L
L
H
H
nC
L
H
L
H
L
H
L
H
OUTPUTS
nY
H
H
H
H
H
H
H
L
1998 Apr 20
2
853–1919 19256
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74LV10
PIN CONFIGURATION
1A
1B
2A
2B
2C
2Y
GND
1
2
3
4
5
6
7
14 VCC
13 1C
12 1Y
11 3C
10 3B
9
8
3A
LOGIC SYMBOL
1
2
13
1A
1B
1C
1Y
12
3
4
5
2A
2B
2C
2Y
6
9
3Y
10
11
3A
3B
3C
3Y
8
SV00416
SV00417
LOGIC SYMBOL (IEEE/IEC)
1
2
13
3
4
5
9
10
11
LOGIC DIAGRAM (ONE GATE)
&
12
A
&
6
B
C
8
Y
&
SV00419
SV00418
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
DC supply voltage
Input voltage
Output voltage
Operating ambient temperature range in free air
See DC and AC
characteristics
V
CC
= 1.0V to 2.0V
V
CC
= 2.0V to 2.7V
V
CC
= 2.7V to 3.6V
CONDITIONS
See Note1
MIN
1.0
0
0
–40
–40
–
–
–
–
–
–
TYP.
3.3
–
–
MAX
3.6
V
CC
V
CC
+85
+125
500
200
100
UNIT
V
V
V
°C
ns/V
Input rise and fall times
NOTE:
1. The LV is guaranteed to function down to V
CC
= 1.0V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2V to V
CC
= 3.6V.
1998 Apr 20
3
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74LV10
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
V
CC
"I
IK
"I
OK
"I
O
"I
GND
,
"I
CC
T
stg
P
TOT
PARAMETER
DC supply voltage
DC input diode current
DC output diode current
DC output source or sink current
– standard outputs
DC V
CC
or GND current for types with
– standard outputs
Storage temperature range
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: –40 to +125°C
above +70°C derate linearly with 12 mW/K
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
V
I
< –0.5 or V
I
> V
CC
+ 0.5V
V
O
< –0.5 or V
O
> V
CC
+ 0.5V
–0.5V < V
O
< V
CC
+ 0.5V
CONDITIONS
RATING
–0.5 to +4.6
20
50
25
UNIT
V
mA
mA
mA
50
–65 to +150
750
500
400
mA
°C
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
V
CC
= 1.2 V
V
IH
HIGH l
level I
l Input
t
voltage
V
CC
= 2.0 V
V
CC
= 2.7 to 3.6 V
V
CC
= 1.2 V
V
IL
LOW l
l Input
t
level I
voltage
V
CC
= 2.0 V
V
CC
= 2.7 to 3.6 V
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
O
OH
HIGH level output
voltage; all outputs
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100µA
V
OH
HIGH level output
voltage;
STANDARD
outputs
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 6mA
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
O
OL
LOW level output
voltage; all outputs
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100µA
V
OL
LOW level output
voltage;
STANDARD
outputs
Input leakage
current
Quiescent supply
current; SSI
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 6mA
1.8
2.5
2.8
2.40
1.2
2.0
2.7
3.0
2.82
0
0
0
0
0.25
0.2
0.2
0.2
0.40
0.2
0.2
0.2
0.50
V
V
1.8
2.5
2.8
2.20
V
V
0.9
1.4
2.0
0.3
0.6
0.8
-40°C to +85°C
TYP
1
MAX
-40°C to +125°C
MIN
0.9
1.4
2.0
0.3
0.6
0.8
V
V
MAX
UNIT
I
I
I
CC
V
CC
= 3.6 V; V
I
= V
CC
or GND
V
CC
= 3.6V; V
I
= V
CC
or GND; I
O
= 0
1.0
20.0
1.0
40
µA
µA
1998 Apr 20
4
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74LV10
DC ELECTRICAL CHARACTERISTICS (Continued)
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
Additional
quiescent supply
current per input
TEST CONDITIONS
MIN
∆I
CC
V
CC
= 2.7 V to 3.6 V; V
I
= V
CC
– 0.6 V
-40°C to +85°C
TYP
1
MAX
500
-40°C to +125°C
MIN
MAX
850
µA
UNIT
NOTE:
1. All typical values are measured at T
amb
= 25°C.
AC CHARACTERISTICS
GND = 0V; t
r
= t
f
≤
2.5ns; C
L
= 50pF; R
L
= 1KΩ
SYMBOL
PARAMETER
WAVEFORM
CONDITION
V
CC
(V)
1.2
t
PHL/PLH
/
Propagation delay
g
y
nA, nB, nC to nY
Figure 1, 2
1
2.0
2.7
3.0 to 3.6
NOTES:
1. Unless otherwise stated, all typical values are measured at T
amb
= 25°C.
2. Typical values are measured at V
CC
= 3.3 V.
MIN
LIMITS
–40 to +85
°C
TYP
1
55
19
14
10
2
36
26
21
44
33
26
ns
MAX
–40 to +125
°C
MIN
MAX
UNIT
AC WAVEFORMS
V
M
= 1.5 V at V
CC
≥
2.7 V;
V
M
= 0.5
×
V
CC
at V
CC
<
2.7 V;
V
OL
and V
OH
are the typical output voltage drop that occur with the
output load.
VI
nA, nB, nC
INPUT
GND
t PHL
VOH
nY OUTPUT
VOL
VM
t PLH
VM
TEST CIRCUIT
V
CC
V
I
PULSE
GENERATOR
R
T
D.U.T.
V
O
50pF
C
L
R
L
= 1k
Test Circuit for switching times
DEFINITIONS
SV00420
R
L
= Load resistor
C
L
= Load capacitance includes jig and probe capacitance
R
T
= Termination resistance should be equal to Z
OUT
of pulse generators.
TEST
t
PLH/
t
PHL
V
CC
< 2.7V
2.7–3.6V
V
I
V
CC
2.7V
Figure 1. Input (nA, nB, nC) to output (nY) propagation delays.
SV00901
Figure 2. Load circuitry for switching times.
1998 Apr 20
5
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