6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Features:
•
4N2X series: 4N25, 4N26, 4N27, 4N28
•
4N3X series: 4N35, 4N36, 4N37, 4N38
•
H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5
•
High isolation voltage between input and output
(Viso=5000 V rms)
•
Creepage distance >7.6mm
•
Operating temperature up to +110°C
•
Compact dual-in-line package
•
Pb free and RoHS compliant.
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO approval pending
•
NEMKO approval pending
•
DEMKO approval pending
•
FIMKO approval pending
•
CSA approval pending
4N2X Series
4N3X Series
H11AX Series
Schematic
Description
The 4N2X, 4N3X, H11AX series contains an infrared emitting
diode optically coupled to a phototransistor. It is packaged in a
6-pin DIP package and available in wide-lead spacing and SMD
option.
Applications
•
Power supply regulators
•
Digital logic inputs
•
Microprocessor inputs
1. Anode
2. Cathode
3. No Connection
4. Emitter
5. Collector
6. Base
Everlight Electronics Co., Ltd.
Document No：DPC-717-044 Rev. 0
1
http:\\www.everlight.com
September 12, 2007
ELECTRICAL CHARACTERISTICS ( T
PARAMETER
=
A 25°C Unless otherwise noted )
MIN
TYP
MAX
UNITS
TEST CONDITION
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Collector-base Dark Current (I
CBO
)
Current Transfer Ratio (CTR)
H11A1
H11A2
H11A3
H11A4
H11A5
1.2
6
1.5
10
V
V
µ
A
V
V
V
nA
nA
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
C
= 100
µ
A
I
E
= 100
µ
A
V
CE
= 10V
V
CE
= 10V
10mA I
F
,
10mA I
F
,
10mA I
F
,
10mA I
F
,
10mA I
F
,
10V
10V
10V
10V
10V
V
CE
V
CE
V
CE
V
CE
V
CE
Output
30
70
6
50
20
Coupled
50
20
20
10
30
0.4
%
%
%
%
%
V
V
RMS
V
PK
Ω
µ
s
µ
s
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
2
Output Fall Time tf
2
10mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V , I
C
= 2mA
R
L
= 100
Ω
fig 1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
= 100Ω
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
7/12/00
DB91041m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
2.8
150
Relative current transfer ratio
2.4
2.0
1.6
1.2
0.8
0.4
0
-30
0
25
50
75
100
125
1
Relative Current Transfer Ratio
vs. Forward Current
100
50
V
CE
= 0.5V
T
A
= 25°C
2
5
10
20
50
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
Relative current transfer ratio
Forward current I
F
(mA)
60
50
40
30
20
10
-30
0
25
50
75
100
125
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
10
20
50
V
CE
= 10V
T
A
= 25°C
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB91041m-AAS/A1
CE(SAT)
(V)
I
F
= 10mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
Collector-emitter saturation voltage V
I
F
= 10mA
I
C
= 0.5mA
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