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2N5612A

Description
bipolar npn device in a hermetically sealed to66
File Size108KB,3 Pages
ManufacturerAll Sensors
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2N5612A Overview

bipolar npn device in a hermetically sealed to66

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5612A
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
100
5
5
25
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
/W

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Description bipolar npn device in a hermetically sealed to66 bipolar npn device in a hermetically sealed to66
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